HT65N23E
Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.
What the HT65N23E family does
The HT65N23E is a 650 V N-channel enhancement-mode CoolGaN power transistor in a 5 mm × 6 mm DFN package. It features a 140 mΩ on-resistance, 32 A pulsed current, 3.3 nC gate charge, and zero reverse-recovery charge. This device operates from -55°C to 150°C and supports ultra-high switching frequencies. Engineers typically use it in AC-DC and DC-DC converters, totem pole PFC stages, and fast battery charging applications. Its low output charge and ESD safeguard enable high-density, high-efficiency power conversion systems.
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Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
HT65N23E datasheet parameters
| Parameter | Min | Typ | Max | Conditions | Source |
|---|---|---|---|---|---|
| rds on | — | 100 mOhm | 140 mOhm | VGS = 6 V; ID = 5 A; Tj = 25 °C; (on); Static characteristics | HTCSemi datasheet, p. 3 — Table 5 Static characteristics |
| operating temperature (abs max) | -55 °C | — | 150 °C | Maximum rating | HTCSemi datasheet, p. 2 — Table 3 Maximum rating |
| power dissipation (abs max) | — | — | 113 W | Tc = 25 °C; Maximum rating | HTCSemi datasheet, p. 2 — Table 3 Maximum rating |
| reverse voltage | — | 2.5 V | — | VGS = 0 V; ISD = 5 A; Reverse conduction characteristics | HTCSemi datasheet, p. 4 — Table 8 Reverse conduction characteristics |
| reverse leakage current | — | 600 nA | 20 µA | VDS = 650 V; VGS = 0 V; Tj = 25 °C; Static characteristics | HTCSemi datasheet, p. 3 — Table 5 Static characteristics |
| breakdown voltage ds (abs max) | — | — | 650 V | HTCSemi datasheet, p. 2 — Table 3 Maximum rating | |
| drain current | — | 32 A | 32 A | id; Key Performance Parameters at $ Tj = 25\, ^{\circ}C $ | HTCSemi datasheet, p. 1 — Table 1 Key Performance Parameters at |
| vgs threshold | 1.2 V | 1.7 V | 2.5 V | ID = 17.2 mA; VDS = VGS; Tj = 25 °C; gate(th); Static characteristics | HTCSemi datasheet, p. 3 — Table 5 Static characteristics |
| input capacitance | — | 125 pF | — | VGS = 0 V; VDS = 400 V; f = 100 kHz; Dynamic characteristics | HTCSemi datasheet, p. 3 — Table 6 Dynamic characteristics |
| output capacitance | — | 53 pF | — | VGS = 0 V; VDS = 0 to 400 V; effective(er); Dynamic characteristics | HTCSemi datasheet, p. 3 — Table 6 Dynamic characteristics |
| reverse transfer capacitance | — | 500 fF | — | VGS = 0 V; VDS = 400 V; f = 100 kHz; Dynamic characteristics | HTCSemi datasheet, p. 3 — Table 6 Dynamic characteristics |
| gate charge | — | 3.3 nC | 3.3 nC | qg; Key Performance Parameters at $ Tj = 25\, ^{\circ}C $ | HTCSemi datasheet, p. 1 — Table 1 Key Performance Parameters at |
Closest matches to HT65N23E
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2.5× lower drain current, 2.1× lower gate charge, 2.0× higher reverse transfer capacitance
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10.8× lower breakdown voltage ds, 3.2× lower drain current, 2.0× higher input capacitance
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IPD60R360P7S
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AO3400A
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HL2300
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HL2302
4.0× lower drain current, 3.1× lower rds on, 2.3× lower vgs threshold
HL2307
1.8× lower rds on, 1.6× higher input capacitance, 1.2× higher gate charge
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