transistors thyristors

CXT5551

Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.

00 — Overview

What the CXT5551 family does

The CXT5551 is an NPN transistor housed in an SOT-89 package, designed for switching and amplification tasks requiring high voltage handling up to 180V collector-base rating. It supports a maximum collector current of 0.6A and dissipates 500mW of power. Key electrical characteristics include a transition frequency reaching 300MHz, a DC current gain spanning 30 to 300, and a collector-emitter saturation voltage of 0.15V. This component is suitable for applications such as telephony systems where robust high-voltage performance is essential. The device meets MSL level 1 standards and operates across a storage temperature range of -55 to +150 degrees Celsius.

Next step
Start building with CXT5551 → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
01 — Key specifications

CXT5551 datasheet parameters

ParameterMinTypMaxConditionsSource
output current — — 600 mA collector; SOT-89 Hongjiacheng datasheet, p. 1 — SOT-89
operating temperature -55 °C — 150 °C Hongjiacheng datasheet, p. 1 — SOT-89
power dissipation — — 500 mW collector; SOT-89 Hongjiacheng datasheet, p. 1 — SOT-89
breakdown voltage ds 180 V — — IC = 100μA, IE = 0; collector(br); ● Electrical Characteristics (Ta = 25°C Unless otherwise noted) Hongjiacheng datasheet, p. 1 — ● Electrical Characteristics (Ta=25°C Unless otherwise noted)
drain current — 600 mA — Hongjiacheng datasheet, p. 1 — SOT-89
output capacitance — — 6 pF VCB = 10V, IE = 0, f = 1MHz; ● Electrical Characteristics (Ta = 25°C Unless otherwise noted) Hongjiacheng datasheet, p. 1 — ● Electrical Characteristics (Ta=25°C Unless otherwise noted)
collector emitter voltage — — 160 V collector; SOT-89 Hongjiacheng datasheet, p. 1 — SOT-89
emitter base voltage — — 6 V emitter; SOT-89 Hongjiacheng datasheet, p. 1 — SOT-89
03 — Alternatives

Closest matches to CXT5551

FDV303N 7.2× lower breakdown voltage ds, 4.7× higher output capacitance, 1.4× lower power dissipation
FDV301N 7.2× lower breakdown voltage ds, 3.0× lower drain current, 2.7× lower output current
2N7002 5.0× higher emitter base voltage, 3.0× lower breakdown voltage ds, 2.0× lower drain current
2N7002K 3.0× lower breakdown voltage ds, 2.0× lower drain current, 1.4× lower output capacitance
2N7002K-T1 3.0× lower breakdown voltage ds, 2.0× lower drain current, 1.4× lower output capacitance
BSS123 3.5× lower drain current, 1.8× lower breakdown voltage ds, 1.7× lower output capacitance
BSS138PS 3.0× lower breakdown voltage ds, 1.9× lower drain current, 1.8× lower power dissipation
2SK3018 6.0× lower breakdown voltage ds, 2.5× lower power dissipation, 1.5× lower drain current
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