BSS84
Every spec below is cited to the manufacturer datasheet. Compare the closest alternatives, then ask the assistant what it means for your design.
What the BSS84 does
The BSS84 is a P-channel enhancement mode MOSFET designed for high-efficiency power management and general-purpose interfacing. It features a low on-resistance of 10 Ω, a drain-source breakdown voltage of -50 V, and a continuous drain current of -130 mA. The device operates across a junction temperature range of -55 to +150 °C with a total power dissipation of 300 mW. It offers fast switching speed and low input capacitance, making it suitable for analog switches and power management functions. This component is available in SOT23 packages with lead-free plating and is fully RoHS compliant.
Datasheet parameters
| Parameter | Min | Typ | Max | Conditions | Source |
|---|---|---|---|---|---|
| rds on | — | 3.2 Ohm | 10 Ohm | VGS = -5V, ID = -0.100A; (on); ON CHARACTERISTICS (Note 6) | Diodes datasheet, p. 2 — Marking Information |
| operating temperature | -55 °C | — | 150 °C | Operating and Storage Temperature Range TJ, TSTG | Diodes datasheet, p. 2 — Marking Information |
| power dissipation | — | — | 300 mW | (note 5); Marking Information | Diodes datasheet, p. 2 — Marking Information |
| reverse leakage current | — | — | -1 µA | VDS = -50V, VGS = 0V, TJ = +25°C; zero; OFF CHARACTERISTICS (Note 6) | Diodes datasheet, p. 2 — Marking Information |
| breakdown voltage ds | -50 V | — | — | VGS = 0V, ID = -250µA; OFF CHARACTERISTICS (Note 6) | Diodes datasheet, p. 2 — Marking Information |
| drain current | — | -130 mA | — | Diodes datasheet, p. 1 — Product Summary | |
| vgs threshold | -2 V | — | -800 mV | VDS = VGS, ID = -1mA | Diodes datasheet, p. 2 — Marking Information |
| input capacitance | — | 24.6 pF | 45 pF | VDS = -25V, VGS = 0V, f = 1.0MHz; DYNAMIC CHARACTERISTICS (Note 7) | Diodes datasheet, p. 2 — Marking Information |
| output capacitance | — | 4.7 pF | 25 pF | VDS = -25V, VGS = 0V, f = 1.0MHz; DYNAMIC CHARACTERISTICS (Note 7) | Diodes datasheet, p. 2 — Marking Information |
| reverse transfer capacitance | — | 2.8 pF | 12 pF | VDS = -25V, VGS = 0V, f = 1.0MHz; DYNAMIC CHARACTERISTICS (Note 7) | Diodes datasheet, p. 2 — Marking Information |
| gate charge | — | 590 pC | — | VDS = -10V, ID = -0.1A; DYNAMIC CHARACTERISTICS (Note 7) | Diodes datasheet, p. 2 — Marking Information |
Closest matches to BSS84
Frequently asked questions
What is the breakdown voltage ds for the BSS84?
The breakdown voltage ds is -50 V at VGS = 0V, ID = -250µA under OFF CHARACTERISTICS (Note 6).
What is the drain current of the BSS84?
The drain current is -130 mA.
What is the gate charge of the BSS84 under the condition VDS = -10V, ID = -0.1A?
The gate charge is 590 pC.
What is the input capacitance of the BSS84?
The input capacitance is 24.6 pF at VDS = -25V, VGS = 0V, and f = 1.0MHz under DYNAMIC CHARACTERISTICS (Note 7).
What is the maximum operating temperature for the BSS84?
The operating temperature is 150 °C under the Operating and Storage Temperature Range TJ, TSTG condition.
What is the output capacitance of the BSS84?
The output capacitance is 4.7 pF at VDS = -25V, VGS = 0V, f = 1.0MHz under DYNAMIC CHARACTERISTICS (Note 7).
What is the power dissipation of the BSS84 according to note 5 in the Marking Information?
The power dissipation is 300 mW.
What is the maximum on-resistance (rds on) for the BSS84 at VGS = -5V and ID = -0.100A?
The on-resistance is 3.2 Ohm.
What is the reverse leakage current of the BSS84 at VDS = -50V, VGS = 0V, and TJ = +25°C?
The reverse leakage current is -1 µA.
What is the reverse transfer capacitance of the BSS84?
The reverse transfer capacitance is 2.8 pF at VDS = -25V, VGS = 0V, f = 1.0MHz; DYNAMIC CHARACTERISTICS (Note 7).
What is the VGS threshold of the BSS84?
The VGS threshold is -800 mV when VDS = VGS and ID = -1mA.