BSS84 — Datasheet Summary, Specs & Alternatives

01 — Overview

This Diodes Incorporated datasheet covers the BSS84 and BSS84-7-F, a P-channel enhancement mode MOSFET. Designed for high-efficiency power management, it features low on-resistance of 10Ω, a drain-source breakdown voltage of -50V, and a maximum continuous drain current of -130mA. The device offers fast switching speeds with typical turn-on delay times around 10ns and input capacitance under 45pF. It is fully RoHS compliant, lead-free, and qualified to JEDEC standards for high reliability in general-purpose and automotive applications.

02 — Key specifications

Datasheet parameters

Parameter	Min	Typ	Max	Conditions
rds on	—	3.2 Ohm	10 Ohm	VGS = -5V, ID = -0.100A
operating temperature	-55 °C	—	150 °C
power dissipation	—	—	300 mW
reverse leakage current	—	—	-1 µA	VDS = -50V, VGS = 0V, TJ = +25°C
breakdown voltage ds	-50 V	—	—	VGS = 0V, ID = -250µA
drain current	—	—	-130 mA
vgs threshold	-2 V	—	-800 mV
input capacitance	—	24.6 pF	45 pF	VDS = -25V, VGS = 0V, f = 1.0MHz
output capacitance	—	4.7 pF	25 pF	VDS = -25V, VGS = 0V, f = 1.0MHz
reverse transfer capacitance	—	2.8 pF	12 pF	VDS = -25V, VGS = 0V, f = 1.0MHz
gate charge	—	280 pC	—	VDS = -10V, ID = -0.1A

03 — Alternatives

Closest matches to BSS84

2N7002-13-F 2.3× higher output capacitance, 1.4× lower reverse transfer capacitance, 1.3× lower gate charge

2N7002K 2.7× lower rds on, 1.2× higher power dissipation, 1.2× higher input capacitance

2N7002K-T1 1.6× lower rds on, 1.4× higher gate charge, 1.3× higher output capacitance

RK7002BM 1.9× lower rds on, 1.6× lower input capacitance, 1.4× lower reverse transfer capacitance

2N7002 6.1× higher gate charge, 2.8× higher power dissipation, 1.4× higher output capacitance

BSS138PS 3.2× lower rds on, 2.6× higher gate charge, 1.5× higher input capacitance

RUM001L02T2CL 3.5× lower input capacitance, 2.0× lower power dissipation, 1.6× lower reverse transfer capacitance

BSS138L 3.9× higher output capacitance, 1.6× higher input capacitance, 1.5× higher reverse transfer capacitance

04 — FAQ

Frequently asked questions

What is the breakdown voltage ds for the BSS84?

The breakdown voltage ds is -50 V at VGS = 0V and ID = -250µA.

What is the drain current of the BSS84?

The drain current is -130 mA.

What is the gate charge of the BSS84 at VDS = -10V and ID = -0.1A?

The gate charge is 280 pC.

What is the input capacitance of the BSS84?

The input capacitance is 24.6 pF at VDS = -25V, VGS = 0V, and f = 1.0MHz.

What is the maximum operating temperature of the BSS84?

The operating temperature is 150 °C.

What is the output capacitance of the BSS84?

The output capacitance is 4.7 pF at VDS = -25V, VGS = 0V, and f = 1.0MHz.

What is the power dissipation of the BSS84?

The power dissipation is 300 mW.

What is the maximum on-resistance (rds on) of the BSS84 at VGS = -5V and ID = -0.100A?

The on-resistance is 3.2 Ohm.