diodes

BAS416

Every spec below is cited to the manufacturer datasheet. Compare the closest alternatives, then ask the assistant what it means for your design.

00 — Overview

What the BAS416 does

The BAS416 is a fast switching diode in the SOD-323 package, designed for small signal switching and ultra high speed applications. It features a reverse breakdown voltage of 100 V, a maximum power dissipation of 250 mW, and a reverse recovery time of 0.8 ns. The device handles a maximum average forward rectified current of 200 mA and supports non-repetitive peak forward surge currents up to 1.0 A. With a storage temperature range from -55 to +150 degrees Celsius, it operates reliably in demanding environments. The component includes low reverse leakage and high stability, making it suitable for circuits requiring rapid switching speeds and robust performance under varying thermal conditions.

Next step
Start building with BAS416 → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
01 — Key specifications

Datasheet parameters

Datasheet parameters for BAS416
ParameterMinTypMaxConditionsSource
forward voltage (abs max) 900 mV IF = 1.0mA; • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
operating temperature (abs max) -55 °C 150 °C junction temperature range Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
power dissipation (abs max) 250 mW • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
reverse voltage (abs max) 85 V • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
forward current (abs max) 200 mA IF(AV) Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
reverse leakage current (abs max) 25 nA VR = 75V; • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
rectified current (abs max) 200 mA (av); • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
peak pulse current (abs max) 4 A IFSM, tp = 1μs Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
junction capacitance (abs max) 2 pF VR = 0V, f = 1MHz Hongjiacheng datasheet, p. 2 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
reverse recovery time (abs max) 800 ps 3 ns IF = IR = 10mA, Irr = 0.1×IR, RL = 100Ω; • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
02 — Alternatives

Closest matches to BAS416

1N4148WS 5.0× higher reverse recovery time, 2.0× lower peak pulse current, 1.5× higher forward current
1SS181 20.0× higher reverse leakage current, 5.0× higher reverse recovery time, 2.0× lower forward current
1SS226 5.0× higher reverse recovery time, 2.0× lower forward current, 2.0× lower peak pulse current
1SS400 5.0× higher reverse recovery time, 4.0× higher reverse leakage current, 2.0× lower peak pulse current
BAS16 7.5× higher reverse recovery time, 2.0× lower peak pulse current, 1.3× lower forward current
BAS316 5.0× higher reverse recovery time, 2.5× higher forward current, 2.0× lower peak pulse current
BAS516 5.0× higher reverse recovery time, 2.5× higher forward current, 2.0× lower junction capacitance
BAV70 7.5× higher reverse recovery time, 2.0× lower peak pulse current, 1.3× lower junction capacitance
03 — FAQ

Frequently asked questions

What is the maximum average forward current (IF(AV))?

The maximum average forward current (IF(AV)) is 200 mA.

What is the maximum forward voltage of the BAS416 at IF = 1.0mA and Ta = 25°C?

The maximum forward voltage is 900 mV.

What is the junction capacitance of the BAS416 at VR = 0V and f = 1MHz?

The junction capacitance is 2 pF.

What is the maximum operating temperature specified for the BAS416?

The operating temperature is 150 °C under the condition of junction temperature range.

What is the peak pulse current (IFSM) for a pulse width of 1μs?

The peak pulse current is 4 A.

What is the power dissipation of the BAS416?

The power dissipation is 250 mW at Maximum Ratings (Ta = 25°C Unless otherwise specified).

What is the maximum rectified current for the BAS416 at Ta = 25°C?

The maximum rectified current is 200 mA (av).

What is the maximum reverse leakage current for the BAS416 at VR = 75V and Ta = 25°C?

The reverse leakage current is 25 nA.

What is the reverse recovery time of the BAS416 when IF = IR = 10mA, Irr = 0.1×IR, and RL = 100Ω?

The reverse recovery time is 800 ps.

What is the maximum reverse voltage of the BAS416 at Ta = 25°C?

The maximum reverse voltage is 85 V.

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