diodes

1SS226

Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.

00 — Overview

What the 1SS226 family does

The 1SS226 is a fast switching diode in the SOT-23 package designed for small signal and ultra high speed switching applications. It features a maximum repetitive peak reverse voltage of 80 V, a power dissipation of 150 mW, and a forward current capability of 100 mA. The device maintains a reverse recovery time under 4 ns and a maximum average forward rectified current of 100 mA. It operates across a storage temperature range of -55 to +150 degrees Celsius. This component offers low reverse leakage and high stability for reliable performance in various electronic circuits.

Next step
Start building with 1SS226 → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
01 — Key specifications

1SS226 datasheet parameters

ParameterMinTypMaxConditionsSource
forward voltage (abs max) 715 mV IF = 1.0mA; • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
operating temperature (abs max) -55 °C 150 °C storage temperature range; junction temperature 150°C Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
power dissipation (abs max) 150 mW • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
reverse voltage (abs max) 80 V • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
forward current 100 mA Hongjiacheng datasheet, p. 1
reverse leakage current (abs max) 2.5 µA VR = 80V; • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
rectified current (abs max) 100 mA (av); • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
peak pulse current (abs max) 2 A IFSM, non-repetitive peak forward surge current, tp = 1.0ms Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
junction capacitance (abs max) 3 pF VR = 0V, f = 1MHz, max Hongjiacheng datasheet, p. 2 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
reverse recovery time (abs max) 4 ns IF = 10mA, Irr = 0.1×IR, RL = 100Ω; • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
02 — FAQ

1SS226 frequently asked questions

What is the forward current of the 1SS226?

The forward current is 100 mA.

What is the maximum forward voltage of the 1SS226 at IF = 1.0mA and Ta = 25°C?

The maximum forward voltage is 715 mV.

What is the maximum junction capacitance of the 1SS226 at VR = 0V and f = 1MHz?

The maximum junction capacitance is 3 pF.

What is the operating temperature of the 1SS226?

The operating temperature is 150 °C under the condition of storage temperature range; junction temperature 150°C.

What is the non-repetitive peak forward surge current (tp = 1.0ms) for the 1SS226?

The peak pulse current is 2 A.

What is the maximum power dissipation of the 1SS226 at Ta = 25°C?

The maximum power dissipation is 150 mW at Ta = 25°C.

What is the maximum rectified current for the 1SS226 at Ta = 25°C?

The maximum rectified current is 100 mA (av) at Ta = 25°C.

What is the maximum reverse leakage current for the 1SS226 at VR = 80V and Ta = 25°C?

The maximum reverse leakage current is 2.5 µA.

What is the reverse recovery time of the 1SS226 under the condition IF = 10mA, Irr = 0.1×IR, RL = 100Ω?

The reverse recovery time is 4 ns.

What is the maximum reverse voltage rating for the 1SS226?

The maximum reverse voltage is 80 V at Ta = 25°C unless otherwise specified.

03 — Alternatives

Closest matches to 1SS226

BAV70 2.0× higher forward current, 2.0× lower junction capacitance, 2.0× higher rectified current
1SS181 5.0× lower reverse leakage current, 1.4× lower junction capacitance, 1.3× higher forward voltage
BAS16 2.5× lower reverse leakage current, 1.5× lower junction capacitance, 1.5× higher power dissipation
1N4148WS 3.0× higher forward current, 2.5× lower reverse leakage current, 1.5× lower junction capacitance
1SS400 2.2× higher forward current, 1.7× higher forward voltage, 1.1× higher reverse voltage
BAS416 5.0× lower reverse recovery time, 2.0× higher forward current, 2.0× higher peak pulse current
BAS70 20.0× lower peak pulse current, 12.5× lower reverse leakage current, 1.7× lower forward voltage
1N4148W 3.9× lower peak pulse current, 2.7× higher power dissipation, 1.7× higher forward voltage
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