diodes

1SS400

Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.

00 — Overview

What the 1SS400 family does

The 1SS400 is a fast switching diode in the SOD-523 package, designed for small signal and ultra-high speed switching applications. It features a maximum repetitive peak reverse voltage of 80 V, a non-repetitive peak reverse voltage of 90 V, and a maximum average forward rectified current of 100 mA. The device offers a reverse recovery time of 4.0 ns and a power dissipation of 150 mW. With a storage temperature range from -55 to +150 °C, it provides high stability and reliability for demanding electronic circuits.

Next step
Start building with 1SS400 → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
01 — Key specifications

1SS400 datasheet parameters

ParameterMinTypMaxConditionsSource
forward voltage (abs max) 1.2 V IF = 100mA; Test Environment Hongjiacheng datasheet, p. 2 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
operating temperature (abs max) -55 °C 150 °C Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
power dissipation (abs max) 150 mW • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
reverse voltage (abs max) 80 V • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
forward current (abs max) 225 mA • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
reverse leakage current (abs max) 100 nA VR = 80V; Test Environment Hongjiacheng datasheet, p. 2 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
rectified current (abs max) 100 mA (av); • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
peak pulse current (abs max) 2 A Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
junction capacitance (abs max) 3 pF VR = 0V, f = 1MHz Hongjiacheng datasheet, p. 2 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
reverse recovery time (abs max) 4 ns IF = 10mA, VR = 6V, Irr = 0.1×IR, RL = 100Ω; Test Environment Hongjiacheng datasheet, p. 2 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
02 — FAQ

1SS400 frequently asked questions

What is the maximum forward current for the 1SS400 at Ta = 25°C?

The maximum forward current is 225 mA.

What is the forward voltage of the 1SS400 at IF = 100mA?

The forward voltage is 1.2 V.

What is the junction capacitance of the 1SS400 at VR = 0V and f = 1MHz?

The junction capacitance is 3 pF.

What is the maximum operating temperature of the 1SS400?

The operating temperature is 150 °C.

What is the peak pulse current rating for the 1SS400?

The peak pulse current is 2 A.

What is the maximum power dissipation of the 1SS400 at Ta = 25°C?

The maximum power dissipation is 150 mW.

What is the maximum rectified current for the 1SS400 at Ta = 25°C?

The maximum rectified current is 100 mA (av).

What is the reverse leakage current of the 1SS400 at VR = 80V?

The reverse leakage current is 100 nA at VR = 80V.

What is the reverse recovery time of the 1SS400?

The reverse recovery time is 4 ns at IF = 10mA, VR = 6V, Irr = 0.1×IR, and RL = 100Ω.

What is the maximum reverse voltage for the 1SS400?

The maximum reverse voltage is 80 V under the condition of Maximum Ratings (Ta = 25°C Unless otherwise specified).

03 — Alternatives

Closest matches to 1SS400

1N4148WS 10.0× higher reverse leakage current, 1.7× lower forward voltage, 1.5× lower junction capacitance
BAS16 10.0× higher reverse leakage current, 1.7× lower forward voltage, 1.5× lower forward current
BAV70 2.0× lower junction capacitance, 2.0× higher rectified current, 1.7× lower forward voltage
1SS181 5.0× higher reverse leakage current, 2.2× lower forward current, 1.4× lower junction capacitance
1SS226 2.2× lower forward current, 1.7× lower forward voltage, 1.1× lower reverse voltage
BAS21 2.8× higher forward current, 2.8× higher reverse voltage, 2.0× higher rectified current
BAS416 5.0× lower reverse recovery time, 4.0× lower reverse leakage current, 2.0× higher peak pulse current
BAV19WS 12.5× higher reverse recovery time, 2.8× higher forward current, 2.0× higher rectified current
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