diodes

BAS516

Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.

00 — Overview

What the BAS516 family does

The BAS516 is a fast switching diode housed in an SOD-523 package, designed for small signal and ultra high speed switching applications. It features a maximum repetitive peak reverse voltage of 75 V, a non-repetitive peak reverse voltage of 100 V, and a power dissipation of 150 mW. The device supports a maximum average forward rectified current of 250 mA and maintains a reverse recovery time under 4 ns. With a storage temperature range from -55 to +150 °C, it offers high stability and reliability for demanding electronic circuits.

Next step
Start building with BAS516 → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
01 — Key specifications

BAS516 datasheet parameters

ParameterMinTypMaxConditionsSource
forward voltage (abs max) 715 mV IF = 1mA; • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
operating temperature (abs max) -55 °C 150 °C Storage temperature range Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
power dissipation (abs max) 150 mW • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
reverse voltage (abs max) 75 V • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
forward current (abs max) 500 mA repetitive; • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
reverse leakage current (abs max) 30 nA VR = 25V; • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
rectified current (abs max) 250 mA (av); • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
peak pulse current (abs max) 2 A Non-repetitive peak forward surge current IFSM, tp = 1.0μs Hongjiacheng datasheet, p. 1 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
junction capacitance (abs max) 1 pF VR = 0V, f = 1MHz Hongjiacheng datasheet, p. 2 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
reverse recovery time (abs max) 4 ns IF = IR = 10mA, Irr = 0.1×IR, RL = 100Ω; • Maximum Ratings (Ta = 25°C Unless otherwise specified) Hongjiacheng datasheet, p. 2 — • Maximum Ratings (Ta=25°C Unless otherwise specified)
02 — FAQ

BAS516 frequently asked questions

What is the repetitive forward current of the BAS516 at Ta = 25°C?

The repetitive forward current is 500 mA at Ta = 25°C.

What is the forward voltage of the BAS516 at IF = 1mA under Maximum Ratings conditions (Ta = 25°C)?

The forward voltage is 715 mV.

What is the junction capacitance of the BAS516?

The junction capacitance is 1 pF at VR = 0V and f = 1MHz.

What is the operating temperature for the BAS516 under the condition of Storage temperature range?

The operating temperature is 150 °C.

What is the non-repetitive peak forward surge current (IFSM) for a pulse duration of 1.0μs?

The peak pulse current is 2 A.

What is the power dissipation of the BAS516 at Ta = 25°C?

The power dissipation is 150 mW.

What is the maximum rectified current (av) at Ta = 25°C?

The maximum rectified current (av) is 250 mA at Ta = 25°C.

What is the maximum reverse leakage current for the BAS516 at VR = 25V and Ta = 25°C?

The reverse leakage current is 30 nA.

What is the reverse recovery time of the BAS516?

The reverse recovery time is 4 ns when IF = IR = 10mA, Irr = 0.1×IR, and RL = 100Ω.

What is the maximum reverse voltage of the BAS516 at Ta = 25°C?

The maximum reverse voltage is 75 V.

03 — Alternatives

Closest matches to BAS516

BAS316 1.7× higher power dissipation, 1.5× higher junction capacitance, similar forward current
1N4148WS 2.0× higher junction capacitance, 1.7× lower forward current, 1.7× lower rectified current
BAS16 3.3× lower forward current, 2.0× higher junction capacitance, 1.7× lower rectified current
BAS416 5.0× lower reverse recovery time, 2.5× lower forward current, 2.0× higher junction capacitance
BAV70 2.5× lower forward current, 1.5× higher junction capacitance, 1.5× higher power dissipation
BAS21 5.0× higher junction capacitance, 3.3× higher reverse leakage current, 2.5× higher reverse voltage
BAV19WS 12.5× higher reverse recovery time, 5.0× higher junction capacitance, 3.3× higher reverse leakage current
1N4148W 3.9× lower peak pulse current, 3.3× lower forward current, 2.7× higher power dissipation
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