Build with 1N4148 — Datasheet Specs & AI Design Help

00 — Overview

What the 1N4148 does

The 1N4148W is a fast switching diode in the SOD-123 package, designed for small signal switching and ultra high speed applications. It features a maximum repetitive peak reverse voltage of 100 V, a power dissipation of 400 mW, and a reverse recovery time under 4 ns. The device handles a maximum average forward rectified current of 150 mA and operates across a storage temperature range of -55 to +150 °C. These characteristics make it suitable for general purpose switching tasks requiring rapid response times and reliable performance in commercial and industrial environments.

Next step

Start building with 1N4148 → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.

01 — Key specifications

Datasheet parameters

Datasheet parameters for 1N4148
Parameter	Min	Typ	Max	Conditions	Source
forward voltage	—	1.25 V	—	IF = 150 mA, max	Semtech datasheet, p. 1 — Silicon Epitaxial Planar Switching Diode
operating temperature	-65 °C	—	150 °C	Storage temperature range	Semtech datasheet, p. 1 — Silicon Epitaxial Planar Switching Diode
power dissipation	—	—	400 mW	Silicon Epitaxial Planar Switching Diode	Semtech datasheet, p. 1 — Silicon Epitaxial Planar Switching Diode
reverse voltage	—	—	100 V	Silicon Epitaxial Planar Switching Diode	Semtech datasheet, p. 1 — Silicon Epitaxial Planar Switching Diode
forward current	—	—	150 mA	(av); Silicon Epitaxial Planar Switching Diode	Semtech datasheet, p. 1 — Silicon Epitaxial Planar Switching Diode
rectified current	—	150 mA	—	Average Rectified Forward Current IF(AV)	Semtech datasheet, p. 1 — Silicon Epitaxial Planar Switching Diode
junction capacitance	—	2 pF	—	VR = 0 V, f = 1 MHz, max	Semtech datasheet, p. 1 — Silicon Epitaxial Planar Switching Diode
reverse recovery time	—	—	4 ns	Silicon Epitaxial Planar Switching Diode	Semtech datasheet, p. 1 — Silicon Epitaxial Planar Switching Diode

02 — Alternatives

Closest matches to 1N4148

1N4148WS 3.9× higher peak pulse current, 2.0× higher forward current, 2.0× lower power dissipation

1SS355 3.5× higher operating temperature, 1.6× lower power dissipation, 1.5× higher junction capacitance

BAS16 3.9× higher peak pulse current, 1.8× lower power dissipation, 1.7× lower forward voltage

BAV70 3.9× higher peak pulse current, 1.8× lower power dissipation, 1.7× lower forward voltage

1SS181 3.9× higher peak pulse current, 2.7× lower power dissipation, 1.5× lower forward current

1SS226 3.9× higher peak pulse current, 2.7× lower power dissipation, 1.7× lower forward voltage

1SS400 3.9× higher peak pulse current, 2.7× lower power dissipation, 1.5× higher forward current

BAS316 3.9× higher peak pulse current, 3.3× higher forward current, 1.7× lower forward voltage

03 — FAQ

Frequently asked questions

What is the forward current (av) for the 1N4148W Silicon Epitaxial Planar Switching Diode?

The forward current (av) is 150 mA.

What is the maximum forward voltage of the 1N4148W when the forward current is 150 mA?

The maximum forward voltage is 1.25 V at IF = 150 mA.

What is the maximum junction capacitance of the 1N4148W?

The maximum junction capacitance is 2 pF at VR = 0 V and f = 1 MHz.

What is the operating temperature specification for the 1N4148W?

The operating temperature is 150 °C under the condition of Storage temperature range.

What is the power dissipation of the 1N4148W Silicon Epitaxial Planar Switching Diode?

The power dissipation is 400 mW.

What is the average rectified forward current IF(AV) for the 1N4148W?

The average rectified forward current IF(AV) is 150 mA.

What is the reverse recovery time for the 1N4148W Silicon Epitaxial Planar Switching Diode?

The reverse recovery time is 4 ns.

What is the reverse voltage rating for the 1N4148W Silicon Epitaxial Planar Switching Diode?

The reverse voltage is 100 V.