diodes

BA

Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.

00 — Overview

What the BA family does

The BAW56/BAV70/BAV99 are fast switching diodes in SOT-23 packages spanning commercial, industrial, and military temperature grades. They feature a 70 V reverse voltage, 200 mA average forward current, 2.0 A non-repetitive surge current, and 4.0 ns maximum reverse recovery time. These components are designed for general purpose switching applications. The parts meet MSL level 1 standards and are RoHS-compliant with halogen-free molding compound. They operate across a storage temperature range of -55 to +150 degrees Celsius.

Next step
Start building with BA → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
Ordering code:
01 — Key specifications

BAV70 datasheet parameters

ParameterMinTypMaxConditionsSource
forward voltage 715 mV IF = 1mA Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
operating temperature -55 °C 150 °C Operation Junction and Storage Temperature Range TJ, TSTG Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
power dissipation 225 mW SOT-23 Plastic-Encapsulate Diodes Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
reverse voltage 70 V SOT-23 Plastic-Encapsulate Diodes Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
forward current 200 mA SOT-23 Plastic-Encapsulate Diodes Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
reverse leakage current 2.5 µA VR = 70V Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
rectified current 200 mA Forward Current IF Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
peak pulse current 2 A Non-Repetitive Peak Forward Surge Current IFSM @t = 8.3ms Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
junction capacitance 1.5 pF Capacitance between terminals CT, VR = 0, f = 1MHz Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
reverse recovery time 6 ns IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
02 — FAQ

BAV70 frequently asked questions

What is the forward current for BAV70 SOT-23 Plastic-Encapsulate Diodes?

The forward current is 200 mA for SOT-23 Plastic-Encapsulate Diodes.

What is the forward voltage of the BAV70 at IF = 1mA?

The forward voltage is 715 mV at IF = 1mA.

What is the junction capacitance of the BAV70?

The junction capacitance is 1.5 pF, measured with capacitance between terminals CT, VR = 0, f = 1MHz.

What is the maximum operating temperature for the BAV70?

The maximum operating temperature is 150 °C under the Operation Junction and Storage Temperature Range TJ, TSTG condition.

What is the Non-Repetitive Peak Forward Surge Current IFSM at t = 8.3ms?

The peak pulse current is 2 A.

What is the power dissipation for BAV70 SOT-23 Plastic-Encapsulate Diodes?

The power dissipation is 225 mW.

What is the maximum forward current (IF) for the BAV70?

The rectified current for the BAV70 is 200 mA under the condition of Forward Current IF.

What is the reverse leakage current of the BAV70 at VR = 70V?

The reverse leakage current is 2.5 µA at VR = 70V.

What is the reverse recovery time of the BAV70?

The reverse recovery time is 6 ns at IF = IR = 10mA, Irr = 0.1 x IR, and RL = 100Ω.

What is the reverse voltage for BAV70 SOT-23 Plastic-Encapsulate Diodes?

The reverse voltage is 70 V.

01 — Key specifications

BAV99 datasheet parameters

ParameterMinTypMaxConditionsSource
forward voltage 715 mV IF = 1mA Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
operating temperature -55 °C 150 °C Operation Junction and Storage Temperature Range TJ, TSTG Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
power dissipation 225 mW SOT-23 Plastic-Encapsulate Diodes Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
reverse voltage 70 V SOT-23 Plastic-Encapsulate Diodes Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
forward current 200 mA SOT-23 Plastic-Encapsulate Diodes Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
reverse leakage current 500 nA VR = 80 V; Tamb = 25 °C; ir; Per diode Nexperia datasheet, p. 1 — Table 1. Quick reference data
rectified current 200 mA Forward Current IF Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
peak pulse current 2 A Non-Repetitive Peak Forward Surge Current IFSM @t = 8.3ms Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
junction capacitance 1.5 pF Capacitance between terminals CT, VR = 0, f = 1MHz Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
reverse recovery time 6 ns IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
02 — FAQ

BAV99 frequently asked questions

What is the forward current for BAV99 SOT-23 Plastic-Encapsulate Diodes?

The forward current is 200 mA.

What is the forward voltage of the BAV99 at IF = 1mA?

The forward voltage is 715 mV at IF = 1mA.

What is the junction capacitance of the BAV99?

The junction capacitance is 1.5 pF, measured with capacitance between terminals CT, VR = 0, f = 1MHz.

What is the maximum operating temperature?

The maximum operating temperature is 150 °C under the Operation Junction and Storage Temperature Range TJ, TSTG condition.

What is the Non-Repetitive Peak Forward Surge Current IFSM at t = 8.3ms?

The peak pulse current is 2 A.

What is the power dissipation for BAV99 SOT-23 Plastic-Encapsulate Diodes?

The power dissipation is 225 mW.

What is the rectified current of the BAV99?

The rectified current is 200 mA at Forward Current IF.

What is the reverse leakage current of the BAV99 at VR = 80 V and Tamb = 25 °C?

The reverse leakage current is 500 nA per diode.

What is the reverse recovery time of the BAV99?

The reverse recovery time is 6 ns when IF = IR = 10mA, Irr = 0.1 x IR, and RL = 100Ω.

What is the reverse voltage rating for BAV99 SOT-23 Plastic-Encapsulate Diodes?

The reverse voltage is 70 V.

01 — Key specifications

BAW56 datasheet parameters

ParameterMinTypMaxConditionsSource
forward voltage 715 mV IF = 1mA Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
operating temperature -55 °C 150 °C Operation Junction and Storage Temperature Range TJ, TSTG Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
power dissipation 225 mW SOT-23 Plastic-Encapsulate Diodes Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
reverse voltage 70 V SOT-23 Plastic-Encapsulate Diodes Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
forward current 200 mA SOT-23 Plastic-Encapsulate Diodes Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
reverse leakage current 2.5 µA VR = 70V Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
rectified current 200 mA Forward Current IF Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
peak pulse current 2 A Non-Repetitive Peak Forward Surge Current IFSM @t = 8.3ms Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
junction capacitance 1.5 pF Capacitance between terminals CT, VR = 0, f = 1MHz Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
reverse recovery time 6 ns IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω Changjing datasheet, p. 1 — SOT-23 Plastic-Encapsulate Diodes
02 — FAQ

BAW56 frequently asked questions

What is the forward current for SOT-23 Plastic-Encapsulate Diodes?

The forward current is 200 mA.

What is the forward voltage of the BAW56 at IF = 1mA?

The forward voltage is 715 mV at IF = 1mA.

What is the junction capacitance of the BAW56?

The junction capacitance is 1.5 pF with capacitance between terminals CT, VR = 0, f = 1MHz.

What is the maximum operating temperature for the BAW56?

The maximum operating temperature is 150 °C under the Operation Junction and Storage Temperature Range TJ, TSTG condition.

What is the Non-Repetitive Peak Forward Surge Current IFSM at t = 8.3ms?

The peak pulse current is 2 A.

What is the power dissipation for BAW56 SOT-23 Plastic-Encapsulate Diodes?

The power dissipation is 225 mW.

What is the maximum rectified current?

The rectified current is 200 mA at Forward Current IF.

What is the reverse leakage current of the BAW56 at VR = 70V?

The reverse leakage current is 2.5 µA at VR = 70V.

What is the reverse recovery time of the BAW56?

The reverse recovery time is 6 ns when IF = IR = 10mA, Irr = 0.1 x IR, and RL = 100Ω.

What is the reverse voltage for BAW56 SOT-23 Plastic-Encapsulate Diodes?

The reverse voltage is 70 V.

03 — Alternatives

Closest matches to BA

1SS226 2.0× lower forward current, 2.0× higher junction capacitance, 2.0× lower rectified current
1N4148WS 2.5× lower reverse leakage current, 1.5× lower reverse recovery time, 1.5× higher forward current
1SS181 5.0× lower reverse leakage current, 2.0× lower forward current, 2.0× lower rectified current
1SS400 2.0× higher junction capacitance, 2.0× lower rectified current, 1.7× higher forward voltage
BAS16 2.5× lower reverse leakage current, 1.4× higher reverse voltage, 1.3× lower forward current
1N4148W 3.9× lower peak pulse current, 1.8× higher power dissipation, 1.7× higher forward voltage
BAS316 2.5× higher forward current, 1.5× lower reverse recovery time, 1.4× higher reverse voltage
BAS416 7.5× lower reverse recovery time, 2.0× higher peak pulse current, 1.3× higher junction capacitance
Design help What do I need around the BA? →