memory

SST26VF064B

Every spec below is cited to the manufacturer datasheet. Compare the closest alternatives, then ask the assistant what it means for your design.

00 — Overview

What the SST26VF064B does

The SST26VF064B/SST26VF064BA are 64 Mbit Serial Quad I/O flash memory devices operating at 2.3-3.6V. They feature a 104 MHz maximum clock frequency, 100,000 erase/program cycles endurance, and 15 µA standby current. These parts support continuous linear burst modes and offer industrial, industrial plus, and automotive temperature ranges. Engineers typically use them in embedded systems requiring high-speed data storage with low power consumption and enhanced security via one-time programmable identifiers. The family utilizes SuperFlash technology to achieve superior reliability and manufacturability compared to alternate approaches.

Next step
Start building with SST26VF064B → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
01 — Key specifications

Datasheet parameters

Datasheet parameters for SST26VF064B
ParameterMinTypMaxConditionsSource
supply voltage range 2.3 V 3.6 V Microchip datasheet, p. 44 — TABLE 6-1: OPERATING RANGE
operating temperature -40 °C 85 °C Microchip datasheet, p. 44 — TABLE 6-1: OPERATING RANGE
clock frequency 40 MHz fclk; AC OPERATING CHARACTERISTICS ( $ VDD^{1} = 2.3 - 3.6V $) Microchip datasheet, p. 48 — TABLE 8-1: AC OPERATING CHARACTERISTICS ( )
standby current 15 µA 45 µA CE# = VDD, VIN = VDDor VSS; isb; DC OPERATING CHARACTERISTICS ( $ VDD = 2.3 - 3.6V $) Microchip datasheet, p. 47 — TABLE 7-1: DC OPERATING CHARACTERISTICS ( )
input capacitance 6 pF VIN = 0V; cin1 Microchip datasheet, p. 47 — TABLE 7-2: CAPACITANCE (TA = 25°C, F=1 MHz, OTHER PINS OPEN)
slew rate 100 V/µs tsckf2(slew rate); AC OPERATING CHARACTERISTICS ( $ VDD^{1} = 2.3 - 3.6V $) Microchip datasheet, p. 48 — TABLE 8-1: AC OPERATING CHARACTERISTICS ( )
memory size 64 Mbit Microchip datasheet, p. 1
data retention 100 year tdr1; RELIABILITY CHARACTERISTICS Microchip datasheet, p. 47 — TABLE 7-3: RELIABILITY CHARACTERISTICS
program erase cycles 100 kcycle RELIABILITY CHARACTERISTICS Microchip datasheet, p. 47 — TABLE 7-3: RELIABILITY CHARACTERISTICS
page program time 1.5 ms Microchip datasheet, p. 47 — TABLE 7-4: WRITE TIMING PARAMETERS ( )
block erase time 25 ms tbe; WRITE TIMING PARAMETERS ( $ VDD = 2.3 - 3.6V $) Microchip datasheet, p. 47 — TABLE 7-4: WRITE TIMING PARAMETERS ( )
sector erase time 25 ms tse; WRITE TIMING PARAMETERS ( $ VDD = 2.3 - 3.6V $) Microchip datasheet, p. 47 — TABLE 7-4: WRITE TIMING PARAMETERS ( )
output voltage low 200 mV IOL = 100 μA, VDD = VDDMin; vol; DC OPERATING CHARACTERISTICS ( $ VDD = 2.3 - 3.6V $) Microchip datasheet, p. 47 — TABLE 7-1: DC OPERATING CHARACTERISTICS ( )
02 — Alternatives

Closest matches to SST26VF064B

GD25Q128EBIG 6.0× higher block erase time, 5.0× lower data retention, 3.3× higher clock frequency
GD25Q32EBIG 10.0× higher block erase time, 5.0× lower data retention, 3.3× higher clock frequency
GD25Q64EBIG 10.0× higher block erase time, 5.0× lower data retention, 3.3× higher clock frequency
GD25Q16E 10.0× higher block erase time, 5.0× lower data retention, 4.0× lower memory size
GD25Q16EEEG 10.0× higher block erase time, 5.0× lower data retention, 4.0× lower memory size
W25Q128JV-IN 5.0× lower data retention, 4.8× higher block erase time, 4.0× lower rise time
W25Q32JV-IQ 5.0× lower data retention, 4.8× higher block erase time, 4.0× lower rise time
W25Q64JVSFIQ 5.0× lower data retention, 4.8× higher block erase time, 4.0× lower rise time
03 — FAQ

Frequently asked questions

What is the block erase time (tbe) for the SST26VF064B when VDD is 2.3 - 3.6V?

The block erase time (tbe) is 25 ms.

What is the clock frequency (fclk) under AC OPERATING CHARACTERISTICS for VDD = 2.3 - 3.6V?

The clock frequency (fclk) is 40 MHz under AC OPERATING CHARACTERISTICS for VDD = 2.3 - 3.6V.

What is the data retention time under tdr1 RELIABILITY CHARACTERISTICS?

The data retention time is 100 year.

What is the input capacitance (cin1) when VIN = 0V?

The input capacitance is 6 pF.

What is the memory size of the SST26VF064B?

The memory size is 64 Mbit.

What is the maximum operating temperature for the SST26VF064B?

The maximum operating temperature is 85 °C.

What is the maximum output voltage low (vol) under DC operating characteristics when VDD = 2.3 - 3.6V?

The output voltage low is 200 mV at IOL = 100 μA and VDD = VDDMin.

What is the page program time for the SST26VF064B?

The page program time is 1.5 ms.

What is the program erase cycle endurance under RELIABILITY CHARACTERISTICS?

The program erase cycle endurance is 100 kcycle under RELIABILITY CHARACTERISTICS.

What is the sector erase time (tse) for the SST26VF064B?

The sector erase time (tse) is 25 ms under WRITE TIMING PARAMETERS ( $ VDD = 2.3 - 3.6V $ ).

What is the slew rate (tsckf2) under AC operating characteristics when VDD1 is 2.3 - 3.6V?

The slew rate (tsckf2) is 100 V/µs.

What is the standby current (isb) when CE# = VDD, VIN = VDD or VSS, and VDD = 2.3 - 3.6V?

The standby current is 15 µA.

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