embedded processors controllers

MSPM0G3507

Every spec below is cited to the manufacturer datasheet. Compare the closest alternatives, then ask the assistant what it means for your design.

00 — Overview

What the MSPM0G3507 does

The MSPM0G350x family comprises ultra-low-power 32-bit mixed-signal microcontrollers featuring an Arm Cortex-M0+ core operating up to 80MHz. The specific variants, MSPM0G3505, MSPM0G3506, and MSPM0G3507, span memory configurations from 32KB to 128KB flash. These devices operate on a 1.62V to 3.6V supply, support extended temperatures from -40°C to 125°C, and consume as little as 1.5µA in standby mode. They integrate high-performance analog peripherals including two 12-bit 4Msps ADCs, a 12-bit DAC, and two zero-drift op-amps. Typically used in motor control, smart metering, and factory automation, these MCUs combine extensive digital interfaces like CAN-FD and UART with robust data integrity features to meet diverse industrial and consumer application requirements.

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Start building with MSPM0G3507 → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
01 — Key specifications

Datasheet parameters

Datasheet parameters for MSPM0G3507
ParameterMinTypMaxConditionsSource
quiescent current 116 µA 134 µA IO = 0mA, RRI = 0x1; GBW = 0x0; iq; VDD Recommended ranges of supply voltage and operating free air temperature (unless otherwise noted) TI datasheet, p. 45 — over recommended ranges of supply voltage and operating free-air temperat…
supply voltage range 1.62 V 3.6 V vdd; 7.3 Recommended Operating Conditions TI datasheet, p. 25 — 7.3 Recommended Operating Conditions
input offset voltage 200 µV 9 mV Noninverting, unity gain, TA = 25°C, VDD = 3.3V; CHOP = 0x0; vos; 7.18.1 Electrical Characteristics TI datasheet, p. 44 — 7.18.1 Electrical Characteristics
gain bandwidth 6 MHz Noninverting, unity gain, CL = 40 pF; GBW = 0x1; gbw; VDD Recommended ranges of supply voltage and operating free air temperature (unless otherwise noted) TI datasheet, p. 45 — over recommended ranges of supply voltage and operating free-air temperat…
cmrr 48 dB 77 dB Over common mode voltage range; CHOP = 0x0; cmrrdc; 7.18.1 Electrical Characteristics TI datasheet, p. 44 — 7.18.1 Electrical Characteristics
operating temperature -40 °C 125 °C ta; 7.3 Recommended Operating Conditions TI datasheet, p. 25 — 7.3 Recommended Operating Conditions
reverse voltage -3 mV 3 mV eo TI datasheet, p. 42 — 7.12.3 线性参数
input bias current 350 pA 100 nA 0.1V<Vin<VDD-0.3V, VDD = 3.3V, CHOP = 0x0; TA = 125°C; ibias(all packages except pm); VDD Recommended ranges of supply voltage and operating free air temperature (unless otherwise noted) TI datasheet, p. 45 — over recommended ranges of supply voltage and operating free-air temperat…
input capacitance 5 pF ci; over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) TI datasheet, p. 35 — over recommended ranges of supply voltage and operating free-air temperat…
propagation delay 32 ns 50 ns Output Filter off, Overdrive = 100 mV, High Speed Mode; tpd_is; Comparator Electrical Characteristics TI datasheet, p. 42 — over recommended ranges of supply voltage and operating free-air temperat…
operating frequency 2.5 MHz 200 MHz SYSPLLCLK0, SYSPLLCLK1; fsyspll; 7.9.3 System Phase Lock Loop (SYSPLL) TI datasheet, p. 33 — 7.9.3 System Phase Lock Loop (SYSPLL)
slew rate 0.32 V/µs 同相, 单位增益, CL = 40pF; 7.17.1 电气特性 TI datasheet, p. 46 — 7.17.1 电气特性
psrr 74 dB 86 dB Noninverting, unity gain; CHOP = 0x0; psrrdc; VDD Recommended ranges of supply voltage and operating free air temperature (unless otherwise noted) TI datasheet, p. 45 — over recommended ranges of supply voltage and operating free-air temperat…
input voltage noise density 43 nV/√Hz Noninverting, unity gain; f = 1 kHz; en; 7.18.1 Electrical Characteristics TI datasheet, p. 44 — 7.18.1 Electrical Characteristics
cpu speed 80 MHz TI datasheet, p. 1
program memory size 125 KB flash TI datasheet, p. 6 — Table 5-1. Device Comparison
ram size 31.2 KB ram TI datasheet, p. 6 — Table 5-1. Device Comparison
io count 60 TI datasheet, p. 6 — Table 5-1. Device Comparison
adc resolution 12 bit TI datasheet, p. 1
core size 32 bit TI datasheet, p. 1
rise time 6.6 ns SDIO; VDD ≥ 1.71V, CL = 20pF; tr; over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) TI datasheet, p. 38 — over recommended ranges of supply voltage and operating free-air temperat…
fall time 120 ns ODIO; VDD ≥ 1.71V, FM+, CL = 20pF-100pF; tf; over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) TI datasheet, p. 38 — over recommended ranges of supply voltage and operating free-air temperat…
data retention 11.4 year -40°C <= Tj<= 105°C; tret_105; Retention TI datasheet, p. 30 — 7.7 Flash Memory Characteristics
output voltage low 400 mV VDD≥2.7V, IOL, max = 8mAVDD≥1.71V, IOL, max = 4mA-40 °C ≤Ta≤25 °C; over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) TI datasheet, p. 37 — over recommended ranges of supply voltage and operating free-air temperat…
load capacitance 200 pF cload; 7.18.1 Electrical Characteristics TI datasheet, p. 44 — 7.18.1 Electrical Characteristics
settling time 800 ns 1 µs DATA = 0x1EC->0xFFF->0x1EC, Error < ±2 LSB, Vref = internal reference; ts(fs); over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) TI datasheet, p. 44 — over recommended ranges of supply voltage and operating free-air temperat…
02 — Alternatives

Closest matches to MSPM0G3507

MSPM0G3505SDGS28 4.0× lower program memory size, 2.0× lower ram size, similar adc resolution
MSP430FR2310 16.0× lower ram size, 12.5× higher gain bandwidth, 12.0× lower fall time
STM32G071C8 3.2× higher clock frequency, 2.0× lower data retention, 2.0× lower program memory size
CH32V203C6T6 20.0× higher load capacitance, 7.5× higher input offset voltage, 4.1× higher quiescent current
STM32G431C6 8.5× higher clock frequency, 5.8× higher input voltage noise density, 4.0× lower program memory size
ST7590 10.0× lower fall time, 6.0× lower data retention, 5.0× lower settling time
STM32F072C8 6.2× higher output current, 2.7× higher quiescent current, 2.4× higher clock frequency
GD32F103RFT6 10.0× lower fall time, 5.0× lower settling time, 3.4× higher rise time
03 — FAQ

Frequently asked questions

What is the ADC resolution of the MSPM0G3507?

The ADC resolution is 12 bit.

What is the CMRR over the common mode voltage range when CHOP = 0x0?

The CMRR is 77 dB.

What is the core size of the MSPM0G3507?

The core size is 32 bit.

What is the maximum CPU speed of the MSPM0G3507?

The maximum CPU speed is 80 MHz.

What is the data retention time for the MSPM0G3507 under the condition of -40°C <= Tj<= 105°C; tret_105; Retention?

The data retention time is 11.4 year.

What is the fall time (tf) for ODIO when VDD ≥ 1.71V, FM+, and CL = 20pF-100pF?

The fall time is 120 ns.

What is the gain bandwidth under noninverting, unity gain, CL = 40 pF; GBW = 0x1; gbw; VDD Recommended ranges of supply voltage and operating free air temperature (unless otherwise noted) conditions?

The gain bandwidth is 6 MHz.

What is the input bias current for the MSPM0G3507 when Vin is between 0.1V and VDD-0.3V, VDD is 3.3V, CHOP is 0x0, and TA is 125°C?

The input bias current is 350 pA.

What is the input capacitance (ci) of the MSPM0G3507 over recommended ranges of supply voltage and operating free-air temperature?

The input capacitance (ci) is 5 pF over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted).

What is the input offset voltage for the MSPM0G3507 under noninverting, unity gain conditions at TA = 25°C, VDD = 3.3V, with CHOP = 0x0?

The input offset voltage is 200 µV.

What is the input voltage noise density for the MSPM0G3507 under noninverting, unity gain conditions at f = 1 kHz?

The input voltage noise density is 43 nV/√Hz.

What is the number of I/O pins?

The MSPM0G3507 has 60 I/O pins.

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