transistors thyristors

EPC2252

Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.

00 — Overview

What the EPC2252 family does

The EPC2252 is an enhancement mode power transistor utilizing gallium nitride technology for efficient power conversion. This device handles high switching frequencies and low on-state losses across automotive lidar, servers, isolated power supplies, and motor drives. It features an 80 V drain-to-source voltage rating, 8.2 A continuous current, and a maximum on-resistance of 11 mΩ. The component operates from -40 to 150°C with a typical gate drive of 5 V. Its ultra-small 1.5 x 1.5 mm footprint enables higher power density while eliminating reverse recovery losses. The part supports both continuous and pulsed applications up to 96 V.

Next step
Start building with EPC2252 → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
01 — Key specifications

EPC2252 datasheet parameters

ParameterMinTypMaxConditionsSource
rds on 8 mOhm 11 mOhm VGS = 5 V, ID = 11 A; rds(on); Benefits EPC datasheet, p. 1 — Benefits
forward voltage 1.5 V IS = 0.5 A, VGS = 0 V; vsd; Benefits EPC datasheet, p. 1 — Benefits
operating temperature -40 °C 150 °C EPC datasheet, p. 1 — Application Notes:
reverse leakage current 25 µA 120 µA VDS = 80 V, VGS = 0 V; idss; Benefits EPC datasheet, p. 1 — Benefits
breakdown voltage ds 80 V VGS = 0 V, ID = 0.12 mA; Benefits EPC datasheet, p. 1 — Benefits
drain current 8.2 A Continuous (TA = 25°C); id; Maximum Ratings EPC datasheet, p. 1 — Application Notes:
vgs threshold 700 mV 1.2 V 2.5 V VDS = VGS, ID = 2.5 mA; vgs(th); Benefits EPC datasheet, p. 1 — Benefits
input capacitance 440 pF 576 pF VDS = 50 V, VGS = 0 V; ciss; Dynamic Characteristics# (Tj = 25°C unless otherwise stated) EPC datasheet, p. 2 — Benefits
output capacitance 190 pF 204 pF coss; Dynamic Characteristics# (Tj = 25°C unless otherwise stated) EPC datasheet, p. 2 — Benefits
reverse transfer capacitance 1.3 pF crss; Dynamic Characteristics# (Tj = 25°C unless otherwise stated) EPC datasheet, p. 2 — Benefits
gate charge 3.5 nC 4.3 nC VDS = 50 V, VGS = 5 V, ID = 11 A; qg; Dynamic Characteristics# (Tj = 25°C unless otherwise stated) EPC datasheet, p. 2 — Benefits
emitter base voltage 6 V EPC datasheet, p. 1 — Application Notes:
02 — FAQ

EPC2252 frequently asked questions

What is the breakdown voltage ds of the EPC2252?

The breakdown voltage ds is 80 V at VGS = 0 V, ID = 0.12 mA.

What is the maximum continuous drain current (ID) at TA = 25°C?

The maximum continuous drain current (ID) at TA = 25°C is 8.2 A.

What is the maximum emitter-base voltage?

The maximum emitter-base voltage is 6 V.

What is the forward voltage (VSD) of the EPC2252 when IS = 0.5 A and VGS = 0 V?

The forward voltage is 1.5 V.

What is the gate charge (Qg) of the EPC2252?

The gate charge is 3.5 nC at VDS = 50 V, VGS = 5 V, and ID = 11 A.

What is the input capacitance (Ciss) of the EPC2252?

The input capacitance is 440 pF at VDS = 50 V, VGS = 0 V.

What is the maximum operating temperature of the EPC2252?

The operating temperature is 150 °C.

What is the output capacitance (coss) of the EPC2252?

The output capacitance (coss) is 190 pF at Tj = 25°C.

What is the rds(on) of the EPC2252 at VGS = 5 V and ID = 11 A?

The rds(on) is 8 mOhm.

What is the reverse leakage current (idss) of the EPC2252?

The reverse leakage current is 25 µA at VDS = 80 V and VGS = 0 V.

What is the reverse transfer capacitance (crss) of the EPC2252 at Tj = 25°C?

The reverse transfer capacitance (crss) is 1.3 pF at Tj = 25°C.

What is the vgs threshold for the EPC2252?

The vgs threshold is 1.2 V at VDS = VGS, ID = 2.5 mA.

03 — Alternatives

Closest matches to EPC2252

HL2310A 15.0× higher reverse transfer capacitance, 11.2× higher rds on, 5.6× lower output capacitance
HJ8205 4.0× lower breakdown voltage ds, 3.8× higher rds on, 2.6× higher drain current
MDD2302 4.0× lower breakdown voltage ds, 3.1× higher rds on, 2.0× lower drain current
AO3400A 2.7× lower breakdown voltage ds, 2.5× lower output capacitance, 2.2× higher rds on
AO3402 13.8× higher reverse transfer capacitance, 5.4× lower output capacitance, 2.9× higher gate charge
BSS123 2.5× lower gate charge, 1.5× higher reverse transfer capacitance, 1.2× higher breakdown voltage ds
FDV301N 5.8× lower gate charge, 3.2× lower breakdown voltage ds, 1.6× lower emitter base voltage
HL2300 4.0× lower breakdown voltage ds, 3.7× higher drain current, 2.5× higher rds on
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