BAT54SW
Every spec below is cited to the manufacturer datasheet. Compare the closest alternatives, then ask the assistant what it means for your design.
What the BAT54SW does
The BAT54SW is a planar Schottky barrier diode featuring an integrated guard ring for stress protection, available in a compact SOT323 surface-mounted package. It supports a 30 V reverse voltage, handles 200 mA forward current, and maintains a typical forward voltage of 240 mV at 0.1 mA. The component exhibits a maximum reverse recovery time of 5 ns and a capacitance of 10 pF. Engineers typically use this diode for ultra high-speed switching, line termination, voltage clamping, and reverse polarity protection in various electronic circuits.
Datasheet parameters
| Parameter | Min | Typ | Max | Conditions | Source |
|---|---|---|---|---|---|
| forward voltage | — | — | 800 mV | IF = 100 mA; pulsed; tp≤ 300 μs; δ ≤ 0.02; Tamb = 25 °C; vf; Per diode | Nexperia datasheet, p. 1 — Table 1. Quick reference data |
| operating temperature (abs max) | -55 °C | — | 150 °C | tamb; Per device; one diode loaded | Nexperia datasheet, p. 2 — Table 5. Limiting values |
| power dissipation (abs max) | — | — | 200 mW | [2]; ptot; Per device; one diode loaded | Nexperia datasheet, p. 2 — Table 5. Limiting values |
| reverse voltage | — | — | 30 V | Tj = 25 °C; vr; Per diode | Nexperia datasheet, p. 1 — Table 1. Quick reference data |
| forward current (abs max) | — | — | 200 mA | if; Per diode | Nexperia datasheet, p. 2 — Table 5. Limiting values |
| reverse leakage current | — | — | 2 µA | VR = 25 V; tp≤ 300 μs; δ ≤ 0.02; pulsed; Tamb = 25 °C; ir; Per diode | Nexperia datasheet, p. 1 — Table 1. Quick reference data |
| rectified current (abs max) | — | — | 200 mA | Nexperia datasheet, p. 2 — Table 5. Limiting values | |
| junction capacitance | — | — | 10 pF | VR = 1 V; f = 1 MHz; Tamb = 25 °C; cd; Per diode | Nexperia datasheet, p. 3 — Table 7. Characteristics |
| reverse recovery time | — | — | 5 ns | IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA; RL = 100 Ω; Tamb = 25 °C; trr; Per diode | Nexperia datasheet, p. 3 — Table 7. Characteristics |
Closest matches to BAT54SW
Frequently asked questions
What is the forward current if per diode?
The forward current is 200 mA if per diode.
What is the forward voltage (VF) of the BAT54SW at IF = 100 mA (pulsed; tp≤ 300 μs; δ ≤ 0.02; Tamb = 25 °C; per diode)?
The forward voltage is 800 mV.
What is the junction capacitance of the BAT54SW?
The junction capacitance is 10 pF at VR = 1 V; f = 1 MHz; Tamb = 25 °C; cd; Per diode.
What is the maximum operating temperature (tamb) for the BAT54SW when one diode is loaded per device?
The maximum operating temperature is 150 °C.
What is the power dissipation of the BAT54SW?
The power dissipation is 200 mW per device with one diode loaded.
What is the rectified current of the BAT54SW?
The rectified current is 200 mA.
What is the reverse leakage current (ir) per diode for the BAT54SW?
The reverse leakage current is 2 µA at VR = 25 V, tp≤ 300 μs, δ ≤ 0.02, pulsed, and Tamb = 25 °C.
What is the reverse recovery time (trr) of the BAT54SW per diode?
The reverse recovery time is 5 ns at IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA; RL = 100 Ω; Tamb = 25 °C.
What is the reverse voltage rating for the BAT54SW?
The reverse voltage is 30 V at Tj = 25 °C per diode.