Build with H5VL06B — Datasheet Specs & AI Design Help

00 — Overview

What the H5VL06B does

The H5VL06B is a bi-directional 5V ESD protection diode in a DFN0603-2L package. It features a 5V reverse working voltage, 15pF typical junction capacitance, and ±30kV IEC 61000-4-2 ESD ratings for both air and contact discharge. The component handles 8A peak pulse current and 80W peak pulse power. Engineers typically use this part to protect SIM ports, digital camera interfaces, and wearable devices from electrostatic discharge and lightning surges in smart phones, tablets, and set-top boxes.

Next step

Start building with H5VL06B → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.

01 — Key specifications

Datasheet parameters

Datasheet parameters for H5VL06B
Parameter	Min	Typ	Max	Conditions	Source
operating temperature	-55 °C	—	125 °C	Operating Junction Temperature Range	Hongjiacheng datasheet, p. 1 — DFN0603-2L
reverse leakage current	—	—	100 nA	VRWM = 5.0V, Ta = 25°C; Electrical Parameter	Hongjiacheng datasheet, p. 2 — Electrical Parameter
clamping voltage	—	—	6 V	IPP = 1.0A, tp = 8/20μs; clamping; Electrical Parameter	Hongjiacheng datasheet, p. 2 — Electrical Parameter
peak pulse current	—	—	8 A	tp = 8/20 μs; ipp; DFN0603-2L	Hongjiacheng datasheet, p. 1 — DFN0603-2L
junction capacitance	—	15 pF	18 pF	VRMW = 0V, f = 1MHz; Electrical Parameter	Hongjiacheng datasheet, p. 2 — Electrical Parameter
zener voltage	—	6.5 V	—	Breakdown Voltage VBR, IR = 1.0mA, Ta = 25°C, typ	Hongjiacheng datasheet, p. 2 — Electrical Parameter

02 — Alternatives

Closest matches to H5VL06B

ESD5Z2.5T1G 9.7× higher junction capacitance, 2.0× lower reverse voltage, 1.8× higher clamping voltage

BAT54HT1 13.3× lower peak pulse current, 6.0× higher reverse voltage, 5.0× higher reverse leakage current

BAT54SLT1G 13.3× lower peak pulse current, 7.5× lower clamping voltage, 6.0× higher reverse voltage

1SS400 18.0× higher reverse voltage, 5.0× lower junction capacitance, 4.0× lower peak pulse current

B0520W 11.3× higher junction capacitance, 4.0× higher reverse voltage, 1.5× lower peak pulse current

B5817W 8.0× higher junction capacitance, 4.0× higher reverse voltage, 1.4× higher operating temperature

BAS21 3.2× lower peak pulse current, 3.0× lower junction capacitance, 1.4× higher operating temperature

BAS416 17.0× higher reverse voltage, 7.5× lower junction capacitance, 4.0× lower reverse leakage current

03 — FAQ

Frequently asked questions

What is the clamping voltage when IPP = 1.0A and tp = 8/20μs?

The clamping voltage is 6 V.

What is the junction capacitance of the H5VL06B?

The junction capacitance is 15 pF at VRMW = 0V and f = 1MHz.

What is the operating temperature of the H5VL06B?

The operating temperature is 125 °C under the Operating Junction Temperature Range condition.

What is the peak pulse current for the H5VL06B in a DFN0603-2L package?

The peak pulse current is 8 A at tp = 8/20 μs.

What is the reverse leakage current of the H5VL06B at VRWM = 5.0V and Ta = 25°C?

The reverse leakage current is 100 nA.

What is the typical zener voltage under the conditions of Breakdown Voltage VBR, IR = 1.0mA, and Ta = 25°C?

The typical zener voltage is 6.5 V.