Build with B5817W — Datasheet Specs & AI Design Help

00 — Overview

What the B5817W does

The B5817W/B5818W/B5819W are Schottky barrier diodes in the SOD-123 package. These parts span 20V, 30V, and 40V reverse voltage ratings with a 1A average rectified output current and 500mW power dissipation. They feature a junction temperature of 125°C and a diode capacitance of 120pF. Engineers typically use these components in low voltage, high frequency inverters, free wheeling circuits, and polarity protection applications. The solid dot marking indicates a green molding compound device, while the absence of a dot signifies a standard device.

Next step

Start building with B5817W → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.

01 — Key specifications

Datasheet parameters

Datasheet parameters for B5817W
Parameter	Min	Typ	Max	Conditions	Source
output current	—	—	1 A	FEATURES	ChangJiang datasheet, p. 1 — FEATURES
forward voltage	—	—	600 mV	IF = 1A; FEATURES	ChangJiang datasheet, p. 1 — FEATURES
operating temperature	-55 °C	—	150 °C	storage temperature TSTG	ChangJiang datasheet, p. 1 — FEATURES
power dissipation	—	—	500 mW	FEATURES	ChangJiang datasheet, p. 1 — FEATURES
forward current	—	—	1.5 A	repetitive; FEATURES	ChangJiang datasheet, p. 1 — FEATURES
reverse leakage current	—	—	1 mA	ir; FEATURES	ChangJiang datasheet, p. 1 — FEATURES
rectified current	—	1 A	—		ChangJiang datasheet, p. 1 — FEATURES
peak pulse current	—	9 A	—	non-repetitive peak forward surge current, t = 8.3 ms	ChangJiang datasheet, p. 1 — FEATURES
junction capacitance	—	120 pF	—	VR = 4V, f = 1MHz	ChangJiang datasheet, p. 1 — FEATURES

02 — Alternatives

Closest matches to B5817W

B0520W 13.3× lower reverse leakage current, 3.0× lower forward current, 2.0× lower rectified current

ESD5Z2.5T1G 8.0× lower reverse voltage, 2.4× higher forward voltage, 1.2× higher peak pulse current

BAS316 5.0× higher reverse voltage, 4.5× lower peak pulse current, 4.0× lower rectified current

BAS416 7.5× lower forward current, 5.0× lower rectified current, 4.2× higher reverse voltage

BAT54SW 15.0× lower peak pulse current, 12.0× lower junction capacitance, 7.5× lower forward current

ES1A 6.7× lower junction capacitance, 3.3× higher peak pulse current, 2.5× higher reverse voltage

ES1AW 17.1× lower junction capacitance, 3.3× higher peak pulse current, 2.5× higher reverse voltage

ES2A 5.6× higher peak pulse current, 3.9× lower junction capacitance, 2.5× higher reverse voltage

03 — FAQ

Frequently asked questions

What is the repetitive forward current rating?

The repetitive forward current is 1.5 A.

What is the forward voltage of the B5817W at IF = 1A?

The forward voltage is 600 mV at IF = 1A.

What is the junction capacitance of the B5817W at VR = 4V and f = 1MHz?

The junction capacitance is 120 pF.

What is the storage temperature TSTG?

The storage temperature TSTG is 150 °C.

What is the output current specified in the FEATURES section?

The output current is 1 A.

What is the non-repetitive peak forward surge current for the B5817W at t = 8.3 ms?

The peak pulse current is 9 A.

What is the power dissipation of the B5817W under FEATURES conditions?

The power dissipation is 500 mW.

What is the rectified current of the B5817W?

The rectified current is 1 A.

What is the reverse leakage current (ir) for the B5817W?

The reverse leakage current (ir) is 1 mA.