Build with MOC3010 — Datasheet Specs & AI Design Help

00 — Overview

What the MOC3010 does

The MOC301xM series are optically isolated triac driver devices containing a GaAs infrared emitting diode and a light activated silicon bilateral switch. These parts span the MOC3010M through MOC3023M variants, offering peak blocking voltages of 250 V or 400 V. They feature a maximum working insulation voltage of 850 Vpeak and operate across a storage temperature range of -40 to 125 °C. Engineers typically use these components to interface electronic controls with power triacs for managing resistive and inductive loads in 115 V applications. Common uses include industrial controls, solenoid and valve operations, traffic lights, static AC power switching, vending machines, incandescent lamp dimmers, solid state relays, motor control, and lamp ballasts.

Next step

Start building with MOC3010 → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.

01 — Key specifications

Datasheet parameters

Datasheet parameters for MOC3010
Parameter	Min	Typ	Max	Conditions	Source
output current	—	100 mA	—	ITM = 100 mA peak, IF = Rated IFT (VTM test)	onsemi datasheet, p. 4 — TRANSFER CHARACTERISTICS
forward voltage	—	1.15 V	1.5 V	IF = 10 mA; All; vf; Emitter	onsemi datasheet, p. 4 — INDIVIDUAL COMPONENT CHARACTERISTICS
operating temperature	-40 °C	—	85 °C	All; topr; Total Device	onsemi datasheet, p. 3 — MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M
power dissipation	—	—	330 mW	All; pd; Total Device	onsemi datasheet, p. 3 — MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M
reverse voltage	—	—	3 V	All; vr; Emitter	onsemi datasheet, p. 3 — Emitter
forward current	—	—	60 mA	All; if; Emitter	onsemi datasheet, p. 3 — Emitter
reverse leakage current	—	10 nA	100 µA	VR = 3 V, TA = 25°C; All; ir; Emitter	onsemi datasheet, p. 4 — INDIVIDUAL COMPONENT CHARACTERISTICS
isolation voltage	4.17 kV	—	—	t = 1 Minute; All; viso; ISOLATION CHARACTERISTICS	onsemi datasheet, p. 4 — ISOLATION CHARACTERISTICS
channel count	—	1	—		onsemi datasheet, p. 1

02 — Alternatives

Closest matches to MOC3010

PC817 15.0× higher dark current, 2.0× lower output current, 2.0× higher reverse voltage

TLP785 3.7× lower power dissipation, 2.0× lower output current, 1.7× higher reverse voltage

TLP185 16.7× higher forward current, 2.2× lower power dissipation, 2.0× lower output current

TLP185GB 16.7× higher forward current, 2.2× lower power dissipation, 2.0× lower output current

4N35 10.0× higher reverse leakage current, 4.7× lower power dissipation, 2.0× lower dark current

HT-3021 2.2× lower power dissipation, 2.0× higher reverse voltage, 1.6× higher operating temperature

MOC3081 2.2× lower power dissipation, 2.0× higher reverse voltage, 1.6× higher operating temperature

LTV-357T 10.0× higher dark current, 6.2× lower output current, 4.7× lower power dissipation

03 — FAQ

Frequently asked questions

What is the channel count of the MOC3010M?

The channel count is 1.

What is the forward current for the MOC3010M?

The forward current is 60 mA for All; if; Emitter.

What is the forward voltage (vf) of the emitter when IF = 10 mA?

The forward voltage is 1.15 V.

What is the isolation voltage (viso) when t = 1 Minute?

The isolation voltage is 4.17 kV.

What is the maximum operating temperature for the MOC3010M?

The operating temperature is 85 °C for All; topr; Total Device.

What is the output current specification for the MOC3010M?

The output current is 100 mA when ITM = 100 mA peak and IF = Rated IFT (VTM test).

What is the power dissipation for the MOC3010M?

The total device power dissipation (pd) is 330 mW.

What is the reverse leakage current (ir) of the emitter when VR = 3 V and TA = 25°C?

The reverse leakage current is 10 nA.

What is the reverse voltage (vr) for the Emitter?

The reverse voltage (vr) for the Emitter is 3 V under All conditions.