memory

ST25DV

Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.

00 — Overview

What the ST25DV family does

The ST25DV04KC, ST25DV16KC, and ST25DV64KC are dynamic NFC/RFID tag ICs featuring 4-Kbit, 16-Kbit, or 64-Kbit EEPROM. These devices operate on a single supply voltage of 1.8 V to 5.5 V and support a 1 MHz I²C protocol. They offer a custom fast read access up to 53 kbit/s and data retention of 40 years. The family supports ISO/IEC 15693 and NFC Forum Type 5 standards, enabling contactless memory access. Users typically employ these parts for secure data storage in contactless applications, utilizing configurable memory areas protected by passwords. The integrated fast transfer mode facilitates rapid data exchange between the RF and I²C interfaces, while an energy harvesting feature allows powering external components under specific conditions.

Next step
Start building with ST25DV → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
Ordering code:
01 — Key specifications

ST25DV04KC datasheet parameters

ParameterMinTypMaxConditionsSource
quiescent current 110 µA 210 µA VCC = 1.8 V, fC = 1MHz(rise/fall time < 50 ns); icc0(device select e2address); 9.2 I $ ^{2} $C DC and AC parameters ST datasheet, p. 143 — 9.2 I C DC and AC parameters
output current (abs max) 1.5 mA iolmax gpo(when equal to 0); Absolute maximum ratings ST datasheet, p. 141 — Table 245. Absolute maximum ratings
supply voltage range 4.8 V Inventory and Read operations; vmin_1; RF characteristics ST datasheet, p. 150 — Table 256. RF characteristics
operating temperature -40 °C 85 °C Range 6; ta; Operating conditions ST datasheet, p. 151 — Table 257. Operating conditions
clock frequency 50 Hz 1 MHz fc; I²C AC characteristics up to 125 °C ST datasheet, p. 147 — Table 252. I²C AC characteristics up to 125 °C
input capacitance 6 pF cin(other pins); Input parameters ST datasheet, p. 142 — Table 248. Input parameters
operating frequency 424 kHz FCC/32; fsh; RF characteristics ST datasheet, p. 150 — Table 256. RF characteristics
rise time 50 ns tr; AC test measurement conditions ST datasheet, p. 142 — Table 247. AC test measurement conditions
fall time 50 ns CL = 30 pF, VDCG = 1.8 V to 5.5 V; tfgpo cmos; GPO AC characteristics ST datasheet, p. 149 — Table 255. GPO AC characteristics
memory size 4.1 kbit ST datasheet, p. 3
data retention 40 year ST datasheet, p. 1
program erase cycles 1 Mcycle 25 °C ST datasheet, p. 1
page program time 5 ms I²C interface, 1 up to 16 bytes ST datasheet, p. 1
block erase time 5 ms RF interface, one block ST datasheet, p. 1
output voltage low 280 mV 400 mV IOL = 1 mA, VCC = 1.8 V; volgpo od(gpo open drain); GPO DC characteristics up to 85 °C ST datasheet, p. 149 — Table 253. GPO DC characteristics up to 85 °C
load capacitance 100 pF cl; AC test measurement conditions ST datasheet, p. 142 — Table 247. AC test measurement conditions
02 — FAQ

ST25DV04KC frequently asked questions

What is the block erase time for the ST25DV04KC using the RF interface for one block?

The block erase time is 5 ms.

What is the clock frequency (fc) for I²C AC characteristics up to 125 °C?

The clock frequency (fc) for I²C AC characteristics up to 125 °C is 1 MHz.

What is the data retention period for the ST25DV04KC?

The data retention period is 40 year.

What is the fall time under the conditions of CL = 30 pF, VDCG = 1.8 V to 5.5 V, tfgpo cmos, and GPO AC characteristics?

The fall time is 50 ns.

What is the input capacitance when other pins are considered?

The input capacitance is 6 pF under the condition of cin(other pins) for input parameters.

What is the load capacitance under cl AC test measurement conditions?

The load capacitance is 100 pF under cl AC test measurement conditions.

What is the memory size of the ST25DV04KC?

The memory size is 4.1 kbit.

What is the operating frequency under FCC/32; fsh; RF characteristics conditions?

The operating frequency is 424 kHz.

What is the maximum operating temperature for the ST25DV04KC under Range 6 conditions?

The operating temperature is 85 °C.

What is the absolute maximum output current (IOLMAX GPO) when the output is equal to 0?

The absolute maximum output current (IOLMAX GPO) when the output is equal to 0 is 1.5 mA.

What is the output voltage low (VOLGPO) for the ST25DV04KC when IOL = 1 mA, VCC = 1.8 V, and the GPO is in open-drain mode up to 85 °C?

The output voltage low is 280 mV.

What is the page program time for the ST25DV04KC when using the I²C interface to write 1 up to 16 bytes?

The page program time is 5 ms.

01 — Key specifications

ST25DV16KC datasheet parameters

ParameterMinTypMaxConditionsSource
quiescent current 110 µA 210 µA VCC = 1.8 V, fC = 1MHz(rise/fall time < 50 ns); icc0(device select e2address); 9.2 I $ ^{2} $C DC and AC parameters ST datasheet, p. 143 — 9.2 I C DC and AC parameters
output current (abs max) 1.5 mA iolmax gpo(when equal to 0); Absolute maximum ratings ST datasheet, p. 141 — Table 245. Absolute maximum ratings
supply voltage range 4.8 V Inventory and Read operations; vmin_1; RF characteristics ST datasheet, p. 150 — Table 256. RF characteristics
operating temperature -40 °C 85 °C Range 6; ta; Operating conditions ST datasheet, p. 151 — Table 257. Operating conditions
clock frequency 50 Hz 1 MHz fc; I²C AC characteristics up to 125 °C ST datasheet, p. 147 — Table 252. I²C AC characteristics up to 125 °C
input capacitance 6 pF cin(other pins); Input parameters ST datasheet, p. 142 — Table 248. Input parameters
operating frequency 424 kHz FCC/32; fsh; RF characteristics ST datasheet, p. 150 — Table 256. RF characteristics
rise time 50 ns tr; AC test measurement conditions ST datasheet, p. 142 — Table 247. AC test measurement conditions
fall time 50 ns CL = 30 pF, VDCG = 1.8 V to 5.5 V; tfgpo cmos; GPO AC characteristics ST datasheet, p. 149 — Table 255. GPO AC characteristics
memory size 16.4 kbit ST datasheet, p. 3
data retention 40 year ST datasheet, p. 1
program erase cycles 1 Mcycle 25 °C ST datasheet, p. 1
page program time 5 ms I²C interface, 1 up to 16 bytes ST datasheet, p. 1
block erase time 5 ms RF interface, one block ST datasheet, p. 1
output voltage low 280 mV 400 mV IOL = 1 mA, VCC = 1.8 V; volgpo od(gpo open drain); GPO DC characteristics up to 85 °C ST datasheet, p. 149 — Table 253. GPO DC characteristics up to 85 °C
load capacitance 100 pF cl; AC test measurement conditions ST datasheet, p. 142 — Table 247. AC test measurement conditions
02 — FAQ

ST25DV16KC frequently asked questions

What is the block erase time for the ST25DV16KC?

The block erase time is 5 ms when using the RF interface for one block.

What is the clock frequency (fc) for I²C AC characteristics up to 125 °C?

The clock frequency (fc) for I²C AC characteristics up to 125 °C is 1 MHz.

What is the data retention period for the ST25DV16KC?

The data retention period is 40 year.

What is the fall time for the ST25DV16KC under GPO AC characteristics conditions?

The fall time is 50 ns when CL = 30 pF, VDCG = 1.8 V to 5.5 V, and tfgpo cmos.

What is the input capacitance when other pins are connected?

The input capacitance is 6 pF under the condition of cin(other pins).

What is the load capacitance under cl; AC test measurement conditions?

The load capacitance is 100 pF.

What is the memory size of the ST25DV16KC?

The memory size is 16.4 kbit.

What is the operating frequency under FCC/32; fsh; RF characteristics conditions?

The operating frequency is 424 kHz.

What is the maximum operating temperature for the ST25DV16KC under Range 6 operating conditions?

The maximum operating temperature is 85 °C.

What is the absolute maximum output current (IOLMAX GPO) when equal to 0?

The absolute maximum output current (IOLMAX GPO) when equal to 0 is 1.5 mA.

What is the output voltage low (VOL) for the ST25DV16KC when IOL = 1 mA, VCC = 1.8 V, volgpo is open drain, and the temperature is up to 85 °C?

The output voltage low is 280 mV.

What is the page program time for the ST25DV16KC when using the I²C interface to write 1 up to 16 bytes?

The page program time is 5 ms.

01 — Key specifications

ST25DV64KC datasheet parameters

ParameterMinTypMaxConditionsSource
quiescent current 110 µA 210 µA VCC = 1.8 V, fC = 1MHz(rise/fall time < 50 ns); icc0(device select e2address); 9.2 I $ ^{2} $C DC and AC parameters ST datasheet, p. 143 — 9.2 I C DC and AC parameters
output current (abs max) 1.5 mA iolmax gpo(when equal to 0); Absolute maximum ratings ST datasheet, p. 141 — Table 245. Absolute maximum ratings
supply voltage range 4.8 V Inventory and Read operations; vmin_1; RF characteristics ST datasheet, p. 150 — Table 256. RF characteristics
operating temperature -40 °C 85 °C Range 6; ta; Operating conditions ST datasheet, p. 151 — Table 257. Operating conditions
clock frequency 50 Hz 1 MHz fc; I²C AC characteristics up to 125 °C ST datasheet, p. 147 — Table 252. I²C AC characteristics up to 125 °C
input capacitance 6 pF cin(other pins); Input parameters ST datasheet, p. 142 — Table 248. Input parameters
operating frequency 424 kHz FCC/32; fsh; RF characteristics ST datasheet, p. 150 — Table 256. RF characteristics
rise time 50 ns tr; AC test measurement conditions ST datasheet, p. 142 — Table 247. AC test measurement conditions
fall time 50 ns CL = 30 pF, VDCG = 1.8 V to 5.5 V; tfgpo cmos; GPO AC characteristics ST datasheet, p. 149 — Table 255. GPO AC characteristics
memory size 65.5 kbit ST datasheet, p. 3
data retention 40 year ST datasheet, p. 1
program erase cycles 1 Mcycle 25 °C ST datasheet, p. 1
page program time 5 ms I²C interface, 1 up to 16 bytes ST datasheet, p. 1
block erase time 5 ms RF interface, one block ST datasheet, p. 1
output voltage low 280 mV 400 mV IOL = 1 mA, VCC = 1.8 V; volgpo od(gpo open drain); GPO DC characteristics up to 85 °C ST datasheet, p. 149 — Table 253. GPO DC characteristics up to 85 °C
load capacitance 100 pF cl; AC test measurement conditions ST datasheet, p. 142 — Table 247. AC test measurement conditions
02 — FAQ

ST25DV64KC frequently asked questions

What is the block erase time for the ST25DV64KC?

The block erase time is 5 ms when using the RF interface for one block.

What is the clock frequency (fc) for I²C AC characteristics up to 125 °C?

The clock frequency is 1 MHz.

What is the data retention period for the ST25DV64KC?

The data retention is 40 year.

What is the fall time for the GPO AC characteristics?

The fall time is 50 ns when CL = 30 pF, VDCG = 1.8 V to 5.5 V, and tfgpo cmos.

What is the input capacitance when other pins are connected?

The input capacitance is 6 pF when other pins are connected.

What is the load capacitance under cl; AC test measurement conditions?

The load capacitance is 100 pF under cl; AC test measurement conditions.

What is the memory size of the ST25DV64KC?

The memory size is 65.5 kbit.

What is the operating frequency under FCC/32; fsh; RF characteristics conditions?

The operating frequency is 424 kHz.

What is the maximum operating temperature for the ST25DV64KC under Range 6 conditions?

The operating temperature is 85 °C.

What is the absolute maximum output current (IOLMAX GPO) when equal to 0?

The absolute maximum output current (IOLMAX GPO) when equal to 0 is 1.5 mA.

What is the output voltage low specification for the ST25DV64KC?

The output voltage low is 280 mV when IOL = 1 mA, VCC = 1.8 V, volgpo od(gpo open drain), and GPO DC characteristics up to 85 °C.

What is the page program time for the ST25DV64KC when using the I²C interface to program 1 up to 16 bytes?

The page program time is 5 ms.

03 — Alternatives

Closest matches to ST25DV

M24C08-F 20.0× higher rise time, 5.0× higher data retention, 4.0× higher program erase cycles
M24C64-DF 15.6× higher memory size, 5.0× higher data retention, 4.0× higher program erase cycles
M24C02-F 20.0× higher rise time, 5.0× higher data retention, 4.0× higher program erase cycles
AT24C256C 13.9× higher quiescent current, 6.0× higher fall time, 6.0× higher rise time
AT24C64D 16.0× higher memory size, 6.0× higher fall time, 6.0× higher rise time
AT7456E 15.6× lower rise time, 13.9× lower fall time, 10.0× lower program erase cycles
GD25Q128EBIG 10.0× lower fall time, 10.0× lower page program time, 10.0× lower program erase cycles
GD25Q16E 12.5× lower page program time, 10.0× lower fall time, 10.0× lower program erase cycles
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