embedded processors controllers

STM8S105

Every spec below is cited to the manufacturer datasheet. Pick your exact ordering code, compare the closest alternatives, then ask the assistant what it means for your design.

00 — Overview

What the STM8S105 family does

The STM8S105x family comprises 8-bit microcontrollers featuring a 16 MHz core, up to 32 Kbyte Flash, and 1 Kbyte EEPROM. Available in C, K, and S variants with 32, 44, or 48 pins, these devices operate on 2.95 to 5.5 V supplies. Key specifications include a 10-bit ADC, SPI up to 8 Mbit/s, I2C up to 400 kbit/s, and two 16-bit timers. The architecture supports up to 38 I/Os, 32 interrupts, and a 96-bit unique ID. Engineers typically select this MCU for embedded applications requiring robust I/O design, low power consumption, and integrated communication interfaces like UART, SPI, and I2C within compact LQFP or UFQFPN packages.

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Start building with STM8S105 → Every number above is cited straight from the datasheet — ask what they mean for your design, and the assistant answers from the same source documents.
Ordering code:
01 — Key specifications

STM8S105C4 datasheet parameters

ParameterMinTypMaxConditionsSource
output current (abs max) 20 mA iio; Current characteristics ST datasheet, p. 57 — Table 17: Current characteristics
supply voltage range 2.95 V 5.5 V fCPU≤ 16 MHz; vdd(all modes, execution/write/erase); Flash program memory/data EEPROM memory ST datasheet, p. 72 — Table 36. Flash program memory/data EEPROM memory
abs max current (abs max) 100 mA ST datasheet, p. 53 — Table 16. Current characteristics
operating temperature -40 °C 125 °C Maximum power dissipation; ta; General operating conditions ST datasheet, p. 59 — Table 19: General operating conditions
power dissipation 443 mW 44- and 48-pin devices, with output on eight standard ports, two high sink ports and two open drain ports simultaneously(4); pd; General operating conditions ST datasheet, p. 54 — Table 18. General operating conditions
cpu speed 16 MHz ST datasheet, p. 11 — Table 1. STM8S105x4/6 access line features
program memory size 16 KB ST datasheet, p. 11 — Table 1. STM8S105x4/6 access line features
ram size 2 KB ST datasheet, p. 11 — Table 1. STM8S105x4/6 access line features
io count 38 ST datasheet, p. 11 — Table 1. STM8S105x4/6 access line features
adc resolution 10 bit ST datasheet, p. 11 — Table 1. STM8S105x4/6 access line features
core size 8 bit ST datasheet, p. 11 — Table 1. STM8S105x4/6 access line features
rise time 35 ns Fast I/Os load = 50 pF; tr(10 % - 90 %); General characteristics ST datasheet, p. 80 — General characteristics
fall time 300 ns tf(sda) ST datasheet, p. 84 — Table 43. I C characteristics
data retention 20 year TRET = 55° C; tret(data memory); 10.3.5 Memory characteristics ST datasheet, p. 79 — 10.3.5 Memory characteristics
program erase cycles 300 kcycle 1 Mcycle TA = +125 °C; (data memory); Flash program memory/data EEPROM memory ST datasheet, p. 72 — Table 36. Flash program memory/data EEPROM memory
02 — FAQ

STM8S105C4 frequently asked questions

What is the absolute maximum current rating for the STM8S105C4?

The absolute maximum current is 100 mA.

What is the ADC resolution of the STM8S105C4?

The ADC resolution is 10 bit.

What is the core size of the STM8S105C4?

The core size is 8 bit.

What is the maximum CPU speed of the STM8S105C4?

The maximum CPU speed is 16 MHz.

What is the data retention time for the STM8S105C4 memory at TRET = 55° C?

The data retention time is 20 year.

What is the fall time (tf(sda))?

The fall time (tf(sda)) is 300 ns.

What is the total number of I/O ports available on the STM8S105C4?

The STM8S105C4 has 38 I/O ports.

What is the maximum operating temperature under general operating conditions at maximum power dissipation?

The maximum operating temperature is 125 °C.

What is the output current (iio) for the STM8S105C4?

The output current (iio) is 20 mA.

What is the power dissipation for 44- and 48-pin devices with output on eight standard ports, two high sink ports and two open drain ports simultaneously under general operating conditions?

The power dissipation is 443 mW.

What is the program erase cycle endurance for the STM8S105C4 Flash program memory and data EEPROM memory at TA = +125 °C?

The program erase cycle endurance is 1 Mcycle at TA = +125 °C for the Flash program memory and data EEPROM memory.

What is the program memory size of the STM8S105C4?

The program memory size is 16 KB.

01 — Key specifications

STM8S105C6 datasheet parameters

ParameterMinTypMaxConditionsSource
quiescent current 200 µA 320 µA On; Operating mode; LSI RC osc.; idd(ah); Total current consumption in active halt mode at $ VDD = 5 \, V $ ST datasheet, p. 65 — Table 25: Total current consumption in active halt mode at
output current (abs max) 20 mA iio; Current characteristics ST datasheet, p. 57 — Table 17: Current characteristics
supply voltage range 2.95 V 5.5 V fCPU≤ 16 MHz; vdd(all modes, execution/write/erase); Flash program memory/data EEPROM memory ST datasheet, p. 78 — Table 37: Flash program memory/data EEPROM memory
abs max voltage (abs max) 50 mV ST datasheet, p. 57 — 10.2 Absolute maximum ratings
operating temperature -40 °C 125 °C Maximum power dissipation; ta; General operating conditions ST datasheet, p. 59 — Table 19: General operating conditions
clock frequency 1 MHz 4 MHz VDDA = 2.95 to 5.5 V; fadc; ADC characteristics ST datasheet, p. 96 — Table 45: ADC characteristics
power dissipation 443 mW 44 and 48-pin devices, with output on eight standard ports, two high sink ports and two open drain ports simultaneously(4); pd; General operating conditions ST datasheet, p. 59 — Table 19: General operating conditions
cpu speed 16 MHz ST datasheet, p. 9
program memory size 32 KB ST datasheet, p. 9 — Table 2: STM8S105xx access line features
ram size 2 KB ST datasheet, p. 9 — Table 2: STM8S105xx access line features
io count 38 ST datasheet, p. 9 — Table 2: STM8S105xx access line features
adc resolution 10 bit ST datasheet, p. 96 — Table 45: ADC characteristics
core size 8 bit ST datasheet, p. 9
rise time 35 ns Fast I/Os load = 50 pF; tr(10 % - 90 %); General characteristics ST datasheet, p. 80 — General characteristics
fall time 300 ns tf(sda); I²C characteristics ST datasheet, p. 94 — Table 44: I²C characteristics
data retention 20 year TRET = 55° C; tret(data memory); 10.3.5 Memory characteristics ST datasheet, p. 79 — 10.3.5 Memory characteristics
program erase cycles 300 kcycle 1 Mcycle TA = +125 °C; (data memory); 10.3.5 Memory characteristics ST datasheet, p. 79 — 10.3.5 Memory characteristics
load capacitance 20 pF c; HSE oscillator characteristics ST datasheet, p. 74 — Table 33: HSE oscillator characteristics
01 — Key specifications

STM8S105K4 datasheet parameters

ParameterMinTypMaxConditionsSource
quiescent current 200 µA 320 µA On; Operating mode; LSI RC osc. (128 kHz); idd(ah); Total current consumption in active halt mode at $ VDD = 5 \, V $ ST datasheet, p. 59 — Table 24. Total current consumption in active halt mode at
output current (abs max) 20 mA iio; Current characteristics ST datasheet, p. 57 — Table 17: Current characteristics
supply voltage range 2.95 V 5.5 V fCPU≤ 16 MHz; vdd(all modes, execution/write/erase); Flash program memory/data EEPROM memory ST datasheet, p. 72 — Table 36. Flash program memory/data EEPROM memory
abs max voltage (abs max) 50 mV ST datasheet, p. 57 — 10.2 Absolute maximum ratings
abs max current (abs max) 100 mA ST datasheet, p. 53 — Table 16. Current characteristics
operating temperature -40 °C 125 °C Maximum power dissipation; ta; General operating conditions ST datasheet, p. 59 — Table 19: General operating conditions
clock frequency 1 MHz 4 MHz VDD = 2.95 to 5.5 V; fadc; ADC characteristics ST datasheet, p. 85 — Table 44. ADC characteristics
power dissipation 443 mW 44- and 48-pin devices, with output on eight standard ports, two high sink ports and two open drain ports simultaneously(4); pd; General operating conditions ST datasheet, p. 54 — Table 18. General operating conditions
cpu speed 16 MHz ST datasheet, p. 11 — Table 1. STM8S105x4/6 access line features
program memory size 16 KB ST datasheet, p. 11 — Table 1. STM8S105x4/6 access line features
ram size 2 KB ST datasheet, p. 11 — Table 1. STM8S105x4/6 access line features
io count 25 ST datasheet, p. 11 — Table 1. STM8S105x4/6 access line features
adc resolution 10 bit ST datasheet, p. 11 — Table 1. STM8S105x4/6 access line features
core size 8 bit ST datasheet, p. 11 — Table 1. STM8S105x4/6 access line features
rise time 35 ns Fast I/Os load = 50 pF; tr(10 % - 90 %); General characteristics ST datasheet, p. 80 — General characteristics
fall time 300 ns tf(sda) ST datasheet, p. 84 — Table 43. I C characteristics
data retention 20 year TRET = 55° C; tret(data memory); 10.3.5 Memory characteristics ST datasheet, p. 79 — 10.3.5 Memory characteristics
program erase cycles 300 kcycle 1 Mcycle TA = +125 °C; (data memory); Flash program memory/data EEPROM memory ST datasheet, p. 72 — Table 36. Flash program memory/data EEPROM memory
load capacitance 20 pF c; HSE oscillator characteristics ST datasheet, p. 67 — Table 32. HSE oscillator characteristics
01 — Key specifications

STM8S105K6 datasheet parameters

ParameterMinTypMaxConditionsSource
quiescent current 200 µA 320 µA On; Operating mode; LSI RC osc.; idd(ah); Total current consumption in active halt mode at $ VDD = 5 \, V $ ST datasheet, p. 65 — Table 25: Total current consumption in active halt mode at
output current (abs max) 20 mA iio; Current characteristics ST datasheet, p. 57 — Table 17: Current characteristics
supply voltage range 2.95 V 5.5 V fCPU≤ 16 MHz; vdd(all modes, execution/write/erase); Flash program memory/data EEPROM memory ST datasheet, p. 78 — Table 37: Flash program memory/data EEPROM memory
abs max voltage (abs max) 50 mV ST datasheet, p. 57 — 10.2 Absolute maximum ratings
operating temperature -40 °C 125 °C Maximum power dissipation; ta; General operating conditions ST datasheet, p. 59 — Table 19: General operating conditions
clock frequency 1 MHz 4 MHz VDDA = 2.95 to 5.5 V; fadc; ADC characteristics ST datasheet, p. 96 — Table 45: ADC characteristics
power dissipation 443 mW 44 and 48-pin devices, with output on eight standard ports, two high sink ports and two open drain ports simultaneously(4); pd; General operating conditions ST datasheet, p. 59 — Table 19: General operating conditions
cpu speed 16 MHz ST datasheet, p. 9
program memory size 32 KB ST datasheet, p. 9 — Table 2: STM8S105xx access line features
ram size 2 KB ST datasheet, p. 9 — Table 2: STM8S105xx access line features
io count 25 ST datasheet, p. 9 — Table 2: STM8S105xx access line features
adc resolution 10 bit ST datasheet, p. 96 — Table 45: ADC characteristics
core size 8 bit ST datasheet, p. 9
rise time 35 ns Fast I/Os load = 50 pF; tr(10 % - 90 %); General characteristics ST datasheet, p. 80 — General characteristics
fall time 300 ns tf(sda); I²C characteristics ST datasheet, p. 94 — Table 44: I²C characteristics
data retention 20 year TRET = 55° C; tret(data memory); 10.3.5 Memory characteristics ST datasheet, p. 79 — 10.3.5 Memory characteristics
program erase cycles 300 kcycle 1 Mcycle TA = +125 °C; (data memory); 10.3.5 Memory characteristics ST datasheet, p. 79 — 10.3.5 Memory characteristics
load capacitance 20 pF c; HSE oscillator characteristics ST datasheet, p. 74 — Table 33: HSE oscillator characteristics
01 — Key specifications

STM8S105S4 datasheet parameters

ParameterMinTypMaxConditionsSource
quiescent current 200 µA 320 µA On; Operating mode; LSI RC osc. (128 kHz); idd(ah); Total current consumption in active halt mode at $ VDD = 5 \, V $ ST datasheet, p. 59 — Table 24. Total current consumption in active halt mode at
output current (abs max) 20 mA iio; Current characteristics ST datasheet, p. 57 — Table 17: Current characteristics
supply voltage range 2.95 V 5.5 V fCPU≤ 16 MHz; vdd(all modes, execution/write/erase); Flash program memory/data EEPROM memory ST datasheet, p. 72 — Table 36. Flash program memory/data EEPROM memory
abs max voltage (abs max) 50 mV ST datasheet, p. 57 — 10.2 Absolute maximum ratings
abs max current (abs max) 100 mA ST datasheet, p. 53 — Table 16. Current characteristics
operating temperature -40 °C 125 °C Maximum power dissipation; ta; General operating conditions ST datasheet, p. 59 — Table 19: General operating conditions
clock frequency 1 MHz 4 MHz VDD = 2.95 to 5.5 V; fadc; ADC characteristics ST datasheet, p. 85 — Table 44. ADC characteristics
power dissipation 443 mW 44- and 48-pin devices, with output on eight standard ports, two high sink ports and two open drain ports simultaneously(4); pd; General operating conditions ST datasheet, p. 54 — Table 18. General operating conditions
cpu speed 16 MHz ST datasheet, p. 11 — Table 1. STM8S105x4/6 access line features
program memory size 16 KB ST datasheet, p. 11 — Table 1. STM8S105x4/6 access line features
ram size 2 KB ST datasheet, p. 11 — Table 1. STM8S105x4/6 access line features
io count 34 ST datasheet, p. 11 — Table 1. STM8S105x4/6 access line features
adc resolution 10 bit ST datasheet, p. 11 — Table 1. STM8S105x4/6 access line features
core size 8 bit ST datasheet, p. 11 — Table 1. STM8S105x4/6 access line features
rise time 35 ns Fast I/Os load = 50 pF; tr(10 % - 90 %); General characteristics ST datasheet, p. 80 — General characteristics
fall time 300 ns tf(sda) ST datasheet, p. 84 — Table 43. I C characteristics
data retention 20 year TRET = 55° C; tret(data memory); 10.3.5 Memory characteristics ST datasheet, p. 79 — 10.3.5 Memory characteristics
program erase cycles 300 kcycle 1 Mcycle TA = +125 °C; (data memory); Flash program memory/data EEPROM memory ST datasheet, p. 72 — Table 36. Flash program memory/data EEPROM memory
load capacitance 20 pF c; HSE oscillator characteristics ST datasheet, p. 67 — Table 32. HSE oscillator characteristics
03 — Alternatives

Closest matches to STM8S105

STM8L052C6 2.0× higher program memory size, 1.6× lower supply voltage range, 1.5× lower power dissipation
STM8L051F3P6 2.4× lower power dissipation, 2.0× lower program memory size, 2.0× lower ram size
STM8S003F3 2.0× lower program memory size, 2.0× lower ram size, 1.9× lower power dissipation
STM8S903F3 2.4× lower power dissipation, 2.4× lower quiescent current, 2.0× lower program memory size
STM8S001J3M3 9.0× lower power dissipation, 2.0× lower program memory size, 2.0× lower ram size
PY32F002A 15.0× lower fall time, 5.8× lower rise time, 4.0× higher core size
STM32F030K6T6 11.4× lower quiescent current, 4.0× higher core size, 3.6× higher rise time
STM32L011D3 4.0× higher core size, 4.0× lower quiescent current, 2.4× lower fall time
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